Speaker
Stefano Terzo
(Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut) (D)
Description
Silicon pixel modules employing n-in-p planar sensors with an active thickness ranging from 75µm to 285µm were assembled with both FE-I3 and FE-I4 ATLAS chips.
The thinned sensors are designed to avoid the signal degradation and ensure the radiation hardness even after high fluences, moreover the n-in-p technology requires a single side processing and is a cost-effective alternative to n-in-n sensors for larger radii of the silicon pixel tracker.
In this talk we present and compare results of the characterization of these pixel modules after high irradiation up to a fluence of 1e16 n_eq cm^-2.
High precision beam test measurements have been performed with high energy pions at the SpS CERN and compared to results from laboratory obtained using a radioactive Sr90 source.
Cluster proprieties, charge collection and tracking efficiency of the devices have been investigated.
Primary author
Stefano Terzo
(Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut) (D)
