Speaker
Dr
Elena Verbitskaya
(Ioffe Physical-Technical Institute of Russian Academy of Sciences)
Description
Impact of the parameters which define bulk generation current of Si irradiated detectors on the detector characteristics is analyzed. The electric field profile and space charge/free carrier concentrations are simulated regarding generation current and carrier generation lifetime.
Author
Dr
Elena Verbitskaya
(Ioffe Physical-Technical Institute of Russian Academy of Sciences)
Co-author
Dr
Vladimir Eremin
(Ioffe Physical-Technical Institute of Russian Academy of Sciences)
