14–16 Nov 2012
CERN
Europe/Zurich timezone

Simulation of irradiated silicon p-bulk sensors

15 Nov 2012, 12:10
20m
CERN

CERN

6-2-024 on 14th & 15th Nov. 222-R-001 on 16th Nov.
RD50/PPS session (Friday morning) Detector Characterization and Simulations

Speaker

Marco Bomben (Univ. P. et Marie Curie (Paris VI) (FR))

Description

TCAD simulations of irradiated silicon p-bulk sensors have been carried out and the results have been compared to CERN 24 GeV-p irradiated n-in-p diodes. The simulations' results are in good agreement with measured data and allow for realiable predictions on future detectors.

Author

Marco Bomben (Univ. P. et Marie Curie (Paris VI) (FR))

Co-author

Giovanni Marchiori (Univ. P. et Marie Curie (Paris VI) (FR))

Presentation materials