Speaker
Dr
Alexandre Chilingarov
(Lancaster University, UK)
Description
Electrical characterisation is made of the n-in-p microstrip sensors irradiated by 1 MeV neutron equivalent fluence up to 1E+16 n/cm2. It is shown that the interstrip capacitance is not affected by irradiation and the interstrip resistance remains very high up to the maximum investigated fluence.
Author
Dr
Alexandre Chilingarov
(Lancaster University, UK)