21st RD50 Workshop (CERN)

Annealing of Heavy Irradiated n-on-p Diodes at Temperatures 20°, 40°, 60° and 80°C

15 Nov 2012, 11:10

20m

CERN

Detector Characterization and Simulations

Speaker

Marcela Mikestikova (Acad. of Sciences of the Czech Rep. (CZ))

Description

N-on-p Micron diodes were irradiated with reactor neutrons to 1x1015, 2x10^15 and 1x10^16 neq/cm^2. Diodes were submitted to graduated annealing steps at 20°, 40°, 60° and 80°C to verify previously accepted accelerating annealing factors. The evolution of leakage currents and full depletion voltage (FDV) were measured. The FDV was determined from Capacity-Voltage curves and Charge Collection –Voltage curves from infrared laser beam.

Presentation materials

Slides

mikestikova_rd21.pdf