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14–16 Nov 2012
CERN
Europe/Zurich timezone

Annealing of Heavy Irradiated n-on-p Diodes at Temperatures 20°, 40°, 60° and 80°C

15 Nov 2012, 11:10
20m
CERN

CERN

6-2-024 on 14th & 15th Nov. 222-R-001 on 16th Nov.

Speaker

Marcela Mikestikova (Acad. of Sciences of the Czech Rep. (CZ))

Description

N-on-p Micron diodes were irradiated with reactor neutrons to 1x1015, 2x10^15 and 1x10^16 neq/cm^2. Diodes were submitted to graduated annealing steps at 20°, 40°, 60° and 80°C to verify previously accepted accelerating annealing factors. The evolution of leakage currents and full depletion voltage (FDV) were measured. The FDV was determined from Capacity-Voltage curves and Charge Collection –Voltage curves from infrared laser beam.

Primary author

Marcela Mikestikova (Acad. of Sciences of the Czech Rep. (CZ))

Co-authors

Jan Stastny (Division Elementary Particle Phys.) Dr Peter Kodys (Charles University) Zdenek Kotek (Institute of Physics)

Presentation materials