21st RD50 Workshop (CERN)

Session

Defect and Material Characterization

14 Nov 2012, 14:00

CERN

Conveners

Defect and Material Characterization

• Michael Moll (CERN)

2. Electronic properties of vacancy aggregates in n-type silicon for particle detectors

Prof. Pawel Kaminski (Institute of Electronic Materials Technology)

14/11/2012, 14:00

Microscopic Defects and Material Characterization

Vacancy aggregates, formed in silicon exposed to high fluences of hadrons or ions, seem to be the main defects limiting radiation hardness of tracking detectors. Recently, the electronic properties of these defects have been intensively studied using theoretical calculations. However, apart from the case of divacancies, very few experimental results concerning the properties higher order...

4. Radiation damage in n-type silicon after electron irradiation with energies between 1.5 MeV and 15 MeV

Roxana Radu (Institute for Experimental Physics, Hamburg University)

14/11/2012, 14:20

Microscopic Defects and Material Characterization

The study of the radiation damage by electrons of different energies allows investigating separately point and cluster defects: 1 MeV electrons produce only point defects, whereas at 15 MeV cluster defects dominate. For these studies pad diodes fabricated on high resistivity n-type Standard Float Zone (STFZ), Diffusion Oxygenated Float Zone (DOFZ) and thin epitaxial layers grown on...

25. RADIATION DEFECT TRANSFORMATIONS UNDER ANNEALING OF P-TYPE SILICON

Dr Leonid Makarenko (Belarusian state University)

14/11/2012, 14:40

Microscopic Defects and Material Characterization

Comparative studies of radiation defect annealing in p-type silicon diodes made by different producers have been performed. We have studied as pure silicon so silicon-germanium diodes. Radiation defects have been produced by irradiation with electrons and alpha-particles at different temperatures. It has been found that under annealing at temperatures >250 C the concentration of...

5. Evolution of pulsed current and of carrier lifetime characteristics in Si structures during 25 MeV neutrons irradiation using a spallator type source

Dr Eugenijus Gaubas (Vilnius University)

14/11/2012, 15:00

Evolution of pulsed current and of carrier lifetime characteristics in Si structures during 25 MeV neutrons irradiation using a spallator type source E.Gaubas1, T.Ceponis1, A.Jasiunas1, A.Uleckas1, J.Vaitkus1, E.Cortina2, and O.Militaru3 1 - Vilnius University, Institute of Applied Research, Vilnius 2 - Center for Cosmology, Particle Physics and Phenomenology, Universite catholique de...

12. The free carrier transport properties in proton and neutron irradiated Si(Ge)

Prof. Juozas Vaitkus (Vilnius University)

14/11/2012, 15:20

Microscopic Defects and Material Characterization

The Hall and magnetoresistance were investigated in Si(Ge) initial crystals and irradiated to 1e12 and 1e13 protons and neutrons, and by 4-6 MeV electrons to 3.6e16 cm-2 at different temperature.

40. Charge carrier detrapping in irradiated silicon sensors after microsecond laser pulses

Markus Gabrysch (CERN)

14/11/2012, 16:10

An update on the detrapping time constants for charge carriers in irradiated silicon sensors using the TCT method with long (microsecond) laser pulses is given.

11. Measurements on 800 MeV proton irradiated diodes (moved to Thursday morning!)

Alexandra Junkes (Brown University)

14/11/2012, 16:30

Microscopic Defects and Material Characterization

The radiation damage inflicted by protons of different energies leads to differences in the electrical properties of silicon sensors even at similar equivalent fluences. This work aims to understand the impact of radiation damage of protons of different energies. \\ Irradiations in the blue room of the LANSCE facility in Los Alamos with 800 MeV protons have been carried out on a set of Flaot...

16. MOS Capacitor Displacement Damage Dose (DDD) Dosimeter

Dr Fco.Rogelio Palomo Pinto (University of Sevilla, School of Engineering)

14/11/2012, 16:50

Microscopic Defects and Material Characterization

On the characterization by experiments and simulation of the possibilities of nanometric MOS capacitors for DDD dosimetry.

47. New proton irradiation facility in Ankara

Bilge Demirkoz (Middle East Technical University (TR))

14/11/2012, 17:10

28. Discussion Session: Materials and Defects

Michael Moll (CERN)

14/11/2012, 17:20