Eckhart Fretwurst
(II. Institut fuer Experimentalphysik)
13/11/2007, 13:30
Defect and Material Characterization
E. Fretwurst for the Wodean collaboration
Universities of Hamburg, Florence, Minsk, Oslo, Vilnius; NIMP Bucharest, CERN-PH, JSI Ljubljana, Kings College London, ITME Warsaw
A short introduction on the WODEAN project will be given, The main object the project is to combine several methods of defect
analysis in a correlated effort for the investigation of radiation induced defects,...
Ioana Pintilie
(NIMP Bucharest)
13/11/2007, 13:50
Defect and Material Characterization
Cluster related defects were investigated by the Thermally Stimulated Current (TSC) method in neutron irradiated n-type Si diodes during 80C annealing. Three hole traps proved to have an electric-field-enhanced emission characteristic for Coulombic wells. Their zero field emission rates were obtained describing the TSC peaks with the three-dimensional Poole Frenkel formalism when accounting...
Ms
Alexandra Junkes
(Institute for Experimental Physics, University of Hamburg)
13/11/2007, 14:10
Defect and Material Characterization
Isothermal annealing studies at 60° C and 300° C were performed on thin FZ, MCz and EPI-DO n-type silicon diodes after irradiation with reactor neutrons. Deep level transient spectroscopy (DLTS) was used to follow the evolution of defect levels while C/V and I/V characteristics were taken to determine the electrical properties (depletion voltage and leakage current) of the detectors. A...
Dr
Leonid Makarenko
(Belarusian State University)
13/11/2007, 14:30
Defect and Material Characterization
It is expected the formation of defect clusters when high-energy Si knock-on atoms are created and cluster effects are likely to be quite important for radiation damage of silicon detectors in LHC experiments. However the understanding of these effects in Si detectors irradiated with different particles is insufficient as compared to the knowledge on the role of isolated point defects.
DLTS...
Prof.
Pawel Kaminski
(Institute of Electronic Materials Technology)
13/11/2007, 15:30
Defect and Material Characterization
High-resolution photoinduced transient spectroscopy (HRPITS) and photoluminescence (PL) measurements have been employed to studying the annealing-induced changes in the defect structure of MCz Si irradiated with the very high fluence of 1-MeV neutrons. The defect centres were studied after three annealing steps: 1h, 80 oC; 1h, 80 oC + 1h, 160 oC and 1h, 80 oC + 1h, 160 oC + 1h, 240 0C. It is...
Dr
Eugenijus Gaubas
(Vilnius university)
13/11/2007, 15:50
Defect and Material Characterization
Fluence dependent recombination lifetime in neutron and proton irradiated MCz , FZ and epi-Si structures.
E.Gaubas, J.Vaitkus, T.Ceponis, A.Uleckas, J.Raisanen, S.Vayrynen, and E.Fretwurst
Results of comparative investigation of recombination lifetime in neutron and proton irradiated MCz, FZ and epi-Si structures are presented. Recombination lifetime in neutron and high energy proton...
Juozas Vaitkus
(Inst. of Mater. Sci. & Appl. Res. (IMSAR) - Vilnius University)
13/11/2007, 16:10
Defect and Material Characterization
It is presented the dependence of the photoconductivity spectra in the irradiated by neutrons with fluence 1e14 - 1e16 cm-2. The deep local levels are identified by Lucovsky model, data about traps obtained from thermally stimulated conductivity and the effects of conductivity via impurity (traps) band - from the temperature dependence of persistant conductivity. The results are discussed...
Prof.
Bruno Sopko
(Czech Technical University (CTU))
13/11/2007, 16:30
Defect and Material Characterization
N-type SI InP material [100] doped with Fe (deep acceptor) was initial substrate for preparation of detectors structures.
P-N junction structures were produced by liquid phase epitaxy technique with Zn and Mg.
Electrical and detection parameters of structures were measured and compared.
