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13:30
The WODEAN Project
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Eckhart Fretwurst
(II. Institut fuer Experimentalphysik)
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13:50
Cluster related hole traps with enhanced-electric-field-emission- the source for long term annealing in hadron irradiated silicon diodes -
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Ioana Pintilie
(NIMP Bucharest)
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14:10
Annealing studies on defects after neutron irradiation in different silicon material
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Alexandra Junkes
(Institute for Experimental Physics, University of Hamburg)
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14:30
INTERPRETATION OF DLTS DATA FOR SILICON DETECTORS IRRADIATED WITH NEUTRONS
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Leonid Makarenko
(Belarusian State University)
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15:30
Annealing induced evolution of defect centres in MCz silicon irradiated with a neutron fluence of 1e16 cm-2
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Pawel Kaminski
(Institute of Electronic Materials Technology)
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15:50
Fluence dependent recombination lifetime in neutron and proton irradiated MCz , FZ and epi-Si structures.
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Eugenijus Gaubas
(Vilnius university)
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16:10
Photoconuctivity spectra and persistant conductivity in the irradiated Si samples (WODEAN)
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Juozas Vaitkus
(Inst. of Mater. Sci. & Appl. Res. (IMSAR) - Vilnius University)
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16:30
Characteristics of InP Particle Detectors Structures
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Bruno Sopko
(Czech Technical University (CTU))
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16:50
Discussioin Session: Defect and Material Characterization
