Login

11th RD50 Workshop

12–14 Nov 2007
CERN
Europe/Zurich timezone

Support

Session

Pad Detector Characterization & Defect Engineering

12 Nov 2007, 15:50
40-S2-C01 (CERN)

40-S2-C01

CERN

Presentation materials

There are no materials yet.

  1. 29. TCT and CCE measurements for 9 MeV and 24 GeV/c irradiated n-type MCz-Si pad detectors
    Dr Jaakko Haerkoenen (Helsinki Institute of Physics HIP)
    12/11/2007, 15:50
    Defect Engineering and Pad Detector Characterization
    N-type MCz-Si pad detectors have been irradiated by 9 MeV and 24 GeV/c protons up to 1x10^16 neff/cm^2 fluence. The samples have been characterized by Transient Current Technique (TCT) operating with 670nm laser and Charge Collection Efficiency (CCE) measurements performed by 1060nm IR laser. Low and high energy proton irradiation results are compared and charge collection of MCz-Si detectors...
    Go to contribution page
  2. 15. First results on 24 GeV/c proton irradiated thin silicon detectors
    Eckhart Fretwurst
    12/11/2007, 16:10
    E. Fretwurst (a), L. Andricek (b), G. Lindström (a), H.G. Moser (b), I. Pintilie (a,c), R. Richter (b), R. Röder (d) (a) University of Hamburg, (b) MPI-Semiconductor Laboratory Munich, (c) NIMP Bucharest, (d) CiS Institute for Microsensoric Erfurt Preliminary results on 24 GeV/c proton irradiated thin n-type FZ (50 µm, 100 µm), MCz (100 µm), epitaxial (72, 100, 150 µm, standard and...
    Go to contribution page
  3. 3. Epitaxial silicon detectors irradiated with protons and neutrons
    Katharina Kaska (CERN, Technische Universitaet Wien)
    12/11/2007, 16:30
    Defect Engineering and Pad Detector Characterization
    A series of epitaxial detectors of 150 mum thickness produced by different producers (IRST, CNM, HIP) will be compared to each other (CV,IV,CCE) after proton and neutron irradiation.
    Go to contribution page
  4. 8. Determination of Trapping Time Constants in Neutron Irradiated Thin Epitaxial Pad Detectors
    Jens Weber (Universität Dortmund)
    12/11/2007, 16:50
    Defect Engineering and Pad Detector Characterization
    Due to the thickness and therefore very short signal length, the classic analysis techniques (ECC, CCM) failed for the determination of trapping times. We presented a method which allows to extracted the trapping time constant without a time resolved signal. The method is a combination of simulation and measuremnt of the charge collection of an irradiated pad detector.
    Go to contribution page
  5. 34. First results on electric field distribution in irradiated epi-Si detectors
    Dr Elena Verbitskaya (Ioffe Physico-Technical Institute RAS)
    12/11/2007, 17:10
  6. 19. Discussion session
    12/11/2007, 17:30
Building timetable...