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11th RD50 Workshop
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Europe/Zurich
40-S2-C01 (CERN)
40-S2-C01
CERN
Michael Moll
(CERN)
Description
11th RD50 Workshop on Radiation hard semiconductor devices
for very high luminosity colliders
Participants
Alberto Messineo
Alexander Furgeri
Alexander Zaluzhny
Alexandra Junkes
Andrey Aleev
Anna Macchiolo
Anthony Affolder
Barinjaka Mamitiana Rakotomiaramanana
Bruno Sopko
david menichelli
David Pennicard
Dominik Chren
Donato Creanza
Doris Eckstein
Eckhart Fretwurst
Eija Tuominen
Elena Verbitskaya
Erik H.M. HEIJNE
Esa Tuovinen
Eugene Grigoriev
Eugenijus Gaubas
Federico Ravotti
Gianluigi casse
Giulio Pellegrini
Gregor Kramberger
Gregor Pahn
Hans-Günther Moser
Hartmut Sadrozinski
Igor Mandić
Ioana Pintilie
Jaakko Härkönen
Jens Weber
Jiri Popule
Joern Lange
Juan Pablo Balbuena
Julian Becker
Juozas Vaitkus
Jyrki Räisänen
Katharina Kaska
Lars Eklund
Lemaitre Vincent
Leonard Spiegel
Leonid Makarenko
Li Long
Manuel Lozano
Mara Bruzzi
Marcello Mannelli
Martin Frey
Maurice Glaser
Mercedes Miñano
Michael Moll
Monica Scaringella
Oleksiy Lytovchenko
Oliver Bruning
Otilia Militaru
Panja-Riina Luukka
Pawel Kaminski
Peter Kodys
Ralf Röder
Roman Kozlowski
Sergey Rogozhkin
SERGIO DÍEZ
Tilman Rohe
Ulrich Parzefall
Vladimir Cindro
Vladimir Eremin
Vladimir Khomenkov
Vít Sopko
Wim de Boer
Support
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- 09:00 → 09:15
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09:15
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11:10
Towards the Super-LHC (Experiments) 40-S2-C01
40-S2-C01
CERN
- 09:15
- 09:45
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10:15
Coffee break 30m
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10:45
LHCb Upgrade Activities 25mThe plans for the upgrade of the LHCb experiment will be presented. The LHCb experiment plans to upgrade from its nominal instantaneous luminosity of 2x10^32 cm^-2s^-1 to around a factor of ten higher. The key elements of the upgrade will be a displaced vertex trigger at the initial level of triggering and a radiation hard vertex detector. An overview of the changes required to the full experiment will be presented, concentrating particularly on the requirements for the replacement vertex detector . A particle fluence in excess of 10^15 1 MeV neutron equivalents / cm^2 is anticipated for the inner active strips or pixels of the upgraded vertex detector.Speaker: Lars Eklund (Department of Physics and Astronomy)
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11:10
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15:50
Full detector systems 40-S2-C01
40-S2-C01
CERN
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11:10
Results from the Common RD50 Production with Micron 20mWe will show data on C-V, I-V, Cint, Rint etc. pre-rad and post rad. But we will concentrate on charge collection with a beta source and compare neutron irradiated sensors up to 2e15 n/cm^2.Speaker: Hartmut Sadrozinski (Santa Cruz Inst. for Particle Phys. (SCIPP) - Univ. of Californi)
- 11:30
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11:50
CCE results with FZ and MCz p-type detectors after heavy neutron irradiation 20mComparison of the charge collection efficiency as a function of resistivity and annealing times for FZ and MCz p-type silicon microstrip detectors after neutron irradiation up to 3x10^15 cm-2.Speaker: Dr Anthony Affolder (University of Liverpool)
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12:10
lunch break 1h 20m
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13:30
Silicon beam telescope for CMS SLHC detector studies (SiBT) 20mThe silicon strip detector based beam telescope, the SiBT, was upgraded in spring 2007 using DAQ components from the CMS Tracker module testing and Fermilab D0 RunIIb silicon strip sensors from Hamamatsu. The interpolated position resolution of the telescope is 9 µm, it has a S/N of 25 and an active area of 4 x 4 cm2. The telescope contains 8 reference detector planes in ±45 degree orientation and has two slots in the middle of the telescope for the devices to be tested. The telescope can be cooled down to -20°C temperature. In June and August 2007 the telescope was used for studying full-size AC-coupled strip detectors made of n-type magnetic Czochralski silicon.Speaker: Panja-Riina Luukka (Helsinki Institute of Physics HIP)
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13:50
Results of a beamtest with irradiated M-Cz sensors 20mIn a beamtest at CERN H2 the behaviour of irradiated and non-irradiated full-size AC-coupled strip detectors made of n-type magnetic Czochralski silicon was investigated. The sensors of the size of 4x4 cm^2, 300µm thickness with 768 strips and 50µm pitch had been produced at the Helsinki Institute of Physics. After the qualification, the sensors were irradiated with fluences between 10^14/cm^2 and 10^15/cm^2 and were tested again. Modules had been built with irradiated and non-irradiated sensors and APV electronics. The sensors' performances concerning mainly signal/noise, efficiency and resolution were tested with the help of the silicon strip detector based beam telescope SiBT. The beamtest and the results will be presented.Speaker: Martin Frey (Institut fuer Experimentelle Kernphysik)
- 14:10
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14:30
LHCb DAQ for strip detectors 20mWe present details of a readout system for strip detectors, using LHCb Beetle chips and TELL1 DAQ. The front-end chip takes analogue samples from each strip at 40MHz. External triggering and time measurement are required to select hits on the sensors. The system has very recently been used at the ATLAS 3D testbeam, with 3D-STC strips (produced by Trento, tested by Freiburg) and with n-on-p strips using FZ and MCz substrates.Speaker: Dr Lars Eklund (University of Glasgow)
- 14:50
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15:20
Coffee Break 30m
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11:10
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15:50
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18:00
Pad Detector Characterization & Defect Engineering 40-S2-C01
40-S2-C01
CERN
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15:50
TCT and CCE measurements for 9 MeV and 24 GeV/c irradiated n-type MCz-Si pad detectors 20mN-type MCz-Si pad detectors have been irradiated by 9 MeV and 24 GeV/c protons up to 1x10^16 neff/cm^2 fluence. The samples have been characterized by Transient Current Technique (TCT) operating with 670nm laser and Charge Collection Efficiency (CCE) measurements performed by 1060nm IR laser. Low and high energy proton irradiation results are compared and charge collection of MCz-Si detectors is discussed.Speaker: Dr Jaakko Haerkoenen (Helsinki Institute of Physics HIP)
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16:10
First results on 24 GeV/c proton irradiated thin silicon detectors 20mE. Fretwurst (a), L. Andricek (b), G. Lindström (a), H.G. Moser (b), I. Pintilie (a,c), R. Richter (b), R. Röder (d) (a) University of Hamburg, (b) MPI-Semiconductor Laboratory Munich, (c) NIMP Bucharest, (d) CiS Institute for Microsensoric Erfurt Preliminary results on 24 GeV/c proton irradiated thin n-type FZ (50 µm, 100 µm), MCz (100 µm), epitaxial (72, 100, 150 µm, standard and oxygenated) pad detectors will be presented and compared with results from neutron damage.Speaker: Eckhart Fretwurst
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16:30
Epitaxial silicon detectors irradiated with protons and neutrons 20mA series of epitaxial detectors of 150 mum thickness produced by different producers (IRST, CNM, HIP) will be compared to each other (CV,IV,CCE) after proton and neutron irradiation.Speaker: Katharina Kaska (CERN, Technische Universitaet Wien)
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16:50
Determination of Trapping Time Constants in Neutron Irradiated Thin Epitaxial Pad Detectors 20mDue to the thickness and therefore very short signal length, the classic analysis techniques (ECC, CCM) failed for the determination of trapping times. We presented a method which allows to extracted the trapping time constant without a time resolved signal. The method is a combination of simulation and measuremnt of the charge collection of an irradiated pad detector.Speaker: Jens Weber (Universität Dortmund)
- 17:10
- 17:30
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15:50
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18:00
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19:30
In order to allow video conferencing we will have to switch the room! The meeting will take place in 160-1-09
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18:00
RD50 common wafer orders - present status 15mSeveral types of silicon wafers (FZ, MCZ, EPI0 have been ordered via RD50 - A brief overview of the status is given.Speaker: Michael Moll (CERN)
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18:00
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- 09:00 → 09:30
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09:30
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13:30
3D detectors & Simulations & New structures 40-S2-C01
40-S2-C01
CERN
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09:30
SPICE model of irradiation detectors 20mLi Long and Ralf Röder CiS Institut of Micro Senors GmbH 99099 Erfurt, Germany Abstract After three decades persistent investigation and development, semiconductor irradiation detector has continuously improved its performance and extended its application. A huge amount of researches regarding radiation hardness, detection efficiency, position and time resolution, and noise has been made. The semiconductor irradiation detector has reached a high level in both performance and diversity. Mean while, readout system for tracking and imaging has also been developed parallelly. Therefore we attempt to develop a SPICE model for irradiation detectors, which consists all effects of material properties, irradiation and annealing history and geometry. To acquire the parameter for the SPICE model we designed a lot of sensors with different geometry parameters and manufactured with different technology on different silicon materials. The parameters related with the radiation hardness are mainly from the outputs of RD50. A windows program PRODID is developed to generate the SPICE model library. This model can be used by system designer for the simulation of irradiation and maintenance scenario, for the plan of detection system, and the optimized integration of sensors and readout. For the sensor developer it can be used in the technology design and performance simulation.Speaker: Li Long (CIS, Erfurt, Germany)
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09:50
Thin Planar Detectors: Status Report 20mStatus of the R&D on thin planar detectors: - Design and layout of test structures. - Procurement and processing of the SOI-FZ test wafers - Procurement and processing of the EPI wafers - Simulations - Irradiation plansSpeaker: Hans-Günther Moser (Max-Planck-Institut)
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10:10
coffee break 30m
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10:40
Freiburg status report on 3D detectors 20mA summary will be given on recent Freiburg activities with emphasis on tests of 3D STC detectors. We have tested a module with two Trento-made 3Ds, irradiated up 10^15 Neq.Speaker: Gregor Pahn (Fakultaet fuer Physik - Albert-Ludwigs-Universitaet Freiburg)
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11:00
Charge collection simulation of 3D detectors with SLHC radiation damage 20mWe present simulations of radiation-damaged 3D detectors, showing how electrode spacing and different device structures affect depletion and charge collection behaviour at 10^16 neq/cm2 damage. The simulation results are compared with existing measurements on planar and 3D sensors.Speaker: Mr David Pennicard (University of Glasgow)
- 11:20
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11:50
lunch break 1h 30m
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09:30
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13:30
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18:10
Defect and Material Characterization & New Materials 40-S2-C01
40-S2-C01
CERN
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13:30
The WODEAN Project 20mE. Fretwurst for the Wodean collaboration Universities of Hamburg, Florence, Minsk, Oslo, Vilnius; NIMP Bucharest, CERN-PH, JSI Ljubljana, Kings College London, ITME Warsaw A short introduction on the WODEAN project will be given, The main object the project is to combine several methods of defect analysis in a correlated effort for the investigation of radiation induced defects, focusing primarily on trapping. As trapping is largely independent on the detector material and type of hadronic irradiation, it was decided to restrict the experiments on MCz and FZ silicon only. The status after the Vilnius meeting will be reviewed. New results will be presented by members of the collaboration during this workshop.Speaker: Eckhart Fretwurst (II. Institut fuer Experimentalphysik)
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13:50
Cluster related hole traps with enhanced-electric-field-emission- the source for long term annealing in hadron irradiated silicon diodes - 20mCluster related defects were investigated by the Thermally Stimulated Current (TSC) method in neutron irradiated n-type Si diodes during 80C annealing. Three hole traps proved to have an electric-field-enhanced emission characteristic for Coulombic wells. Their zero field emission rates were obtained describing the TSC peaks with the three-dimensional Poole Frenkel formalism when accounting for the spatial distribution of the diodes electric field. As acceptors in the lower half of the gap these centers have a direct impact on the effective doping of the n-type diodes. They are revealed as causing the long-term annealing effects.Speaker: Ioana Pintilie (NIMP Bucharest)
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14:10
Annealing studies on defects after neutron irradiation in different silicon material 20mIsothermal annealing studies at 60° C and 300° C were performed on thin FZ, MCz and EPI-DO n-type silicon diodes after irradiation with reactor neutrons. Deep level transient spectroscopy (DLTS) was used to follow the evolution of defect levels while C/V and I/V characteristics were taken to determine the electrical properties (depletion voltage and leakage current) of the detectors. A possible correlation between the evolution of cluster related DLTS-signals and the current annealing was studied. Further results obtained by DLTS-measurements concerning the annealing behaviour of defect levels in the different materials will be presented and discussed.Speaker: Ms Alexandra Junkes (Institute for Experimental Physics, University of Hamburg)
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14:30
INTERPRETATION OF DLTS DATA FOR SILICON DETECTORS IRRADIATED WITH NEUTRONS 30mIt is expected the formation of defect clusters when high-energy Si knock-on atoms are created and cluster effects are likely to be quite important for radiation damage of silicon detectors in LHC experiments. However the understanding of these effects in Si detectors irradiated with different particles is insufficient as compared to the knowledge on the role of isolated point defects. DLTS is one of the main methods of defect characterization in semiconductor structures. At present two characteristic features of clustered defects are well established. First, it is temperature dependence of DLTS peak amplitude Smax(T) and closely related to this feature the inequivalent heights of divacancy peaks [1-4]. And second, the stretched kinetics for filling of clustered traps [4, 5]. This work focuses on studies of the first effect. Numerical simulation of cluster effect on DLTS signal has been performed. The results of this simulation have been applied to interpret DLTS data obtained for different detectors irradiated with neutrons. It has been found that in detectors made on MCZ silicon not only divacancies but also vacancy-oxygen complex are distributed in clustered form. Results of our studies of bistable defects in irradiated and annealed silicon detectors are also presented. 1. I.V. Antonova, A.V. Vasiliev, V.I. Panov and S.S. Shaimeev, Phys. Tekhn. Poluprovodn. 22, 998 (1988). 2. I.V. Antonova and S.S. Shaimeev, Phys. Tekhn. Poluprovodn. 25, 847 (1991). 3. M. Kuhnke Microscopic and Electrical Properties of Clustered Divacancies in n-Type Silicon ROSE/TN/2003-01. 4. E. V. Monakhov, J. Wong-Leung, A. Yu Kuznetsov, C. Jagadish, and B. G. Svensson, Phys. Rev. B 65, 245201 2002. 5. R. M. Fleming, C. H. Seager, D. V. Lang, P. J. Cooper, E. Bielejec, and J. M. Campbell J. Appl. Phys., 102, 043711 2007.Speaker: Dr Leonid Makarenko (Belarusian State University)
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15:00
Coffee break 30m
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15:30
Annealing induced evolution of defect centres in MCz silicon irradiated with a neutron fluence of 1e16 cm-2 20mHigh-resolution photoinduced transient spectroscopy (HRPITS) and photoluminescence (PL) measurements have been employed to studying the annealing-induced changes in the defect structure of MCz Si irradiated with the very high fluence of 1-MeV neutrons. The defect centres were studied after three annealing steps: 1h, 80 oC; 1h, 80 oC + 1h, 160 oC and 1h, 80 oC + 1h, 160 oC + 1h, 240 0C. It is found that annealing allows the observation of the self-interstitial related W-line in the PL spectra. This is probably due to the annihilation of non-radiative recombination centres. The defect reaction induced by the annealing lead to the significant increase of the A-centres concentration.Speaker: Prof. Pawel Kaminski (Institute of Electronic Materials Technology)
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15:50
Fluence dependent recombination lifetime in neutron and proton irradiated MCz , FZ and epi-Si structures. 20mFluence dependent recombination lifetime in neutron and proton irradiated MCz , FZ and epi-Si structures. E.Gaubas, J.Vaitkus, T.Ceponis, A.Uleckas, J.Raisanen, S.Vayrynen, and E.Fretwurst Results of comparative investigation of recombination lifetime in neutron and proton irradiated MCz, FZ and epi-Si structures are presented. Recombination lifetime in neutron and high energy proton irradiated different materials decreases near linearly with fluence enhancement in the range of 1E12 - 3E16 1/cm2. However, absolute lifetime values are significantly decreased in low energy (~2 MeV) proton irradiated structures relatively to those in neutron and high energy protons irradiated material. Cross-sectional lifetime scans within wafer thickness are presented and discussed.Speaker: Dr Eugenijus Gaubas (Vilnius university)
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16:10
Photoconuctivity spectra and persistant conductivity in the irradiated Si samples (WODEAN) 20mIt is presented the dependence of the photoconductivity spectra in the irradiated by neutrons with fluence 1e14 - 1e16 cm-2. The deep local levels are identified by Lucovsky model, data about traps obtained from thermally stimulated conductivity and the effects of conductivity via impurity (traps) band - from the temperature dependence of persistant conductivity. The results are discussed involving the lifetime, mobility of carriers and induced inhomogeneities dependence on the fluence models.Speaker: Juozas Vaitkus (Inst. of Mater. Sci. & Appl. Res. (IMSAR) - Vilnius University)
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16:30
Characteristics of InP Particle Detectors Structures 20mN-type SI InP material [100] doped with Fe (deep acceptor) was initial substrate for preparation of detectors structures. P-N junction structures were produced by liquid phase epitaxy technique with Zn and Mg. Electrical and detection parameters of structures were measured and compared.Speaker: Prof. Bruno Sopko (Czech Technical University (CTU))
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16:50
Discussioin Session: Defect and Material Characterization 20m
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13:30
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19:00
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23:00
Workshop Dinner 40-S2-C01
40-S2-C01
CERN
The dinner will take place in the Restaurant "La Meyrinoise" in Meyrin, Switzerland. The dinner will start at 20:00 with an Appero.
(Tel.: 022 782 19 30, 1 rue Antoine-Verchère, 1217 Meyrin)
Here is a MAP. Zoom out a little bit and you will see CERN to the left.
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08:30
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11:00
Visit of the ATLAS Experiment ATLAS
ATLAS
CERN
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08:30
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11:00
