Dr
Jaakko Haerkoenen
(Helsinki Institute of Physics HIP)
12/11/2007, 15:50
Defect Engineering and Pad Detector Characterization
N-type MCz-Si pad detectors have been irradiated by 9 MeV and 24 GeV/c protons up to 1x10^16 neff/cm^2 fluence. The samples have been characterized by Transient Current Technique (TCT) operating with 670nm laser and Charge Collection Efficiency (CCE) measurements performed by 1060nm IR laser. Low and high energy proton irradiation results are compared and charge collection of MCz-Si detectors...
Katharina Kaska
(CERN, Technische Universitaet Wien)
12/11/2007, 16:30
Defect Engineering and Pad Detector Characterization
A series of epitaxial detectors of 150 mum thickness produced by different producers (IRST, CNM, HIP) will be compared to each other (CV,IV,CCE) after proton and neutron irradiation.
Jens Weber
(Universität Dortmund)
12/11/2007, 16:50
Defect Engineering and Pad Detector Characterization
Due to the thickness and therefore very short signal length, the classic analysis techniques (ECC, CCM) failed for the determination of trapping times. We presented a method which allows to extracted the trapping time constant without a time resolved signal. The method is a combination of simulation and measuremnt of the charge collection of an irradiated pad detector.
Dr
Elena Verbitskaya
(Ioffe Physico-Technical Institute RAS)
12/11/2007, 17:10
