Conveners
Planar Sensors 2
- Gianluigi Casse (University of Liverpool (GB))
Yoshinobu Unno
(High Energy Accelerator Research Organization (JP))
18/02/2013, 16:40
Radiation-tolerant n-in-p silicon sensors were developed for use in very high radiation environments. Novel n-in-p silicon strip and pixel sensors and test structures were fabricated, tested and evaluated, in order to understand the designs implemented. The resistance between the n-implants (interstrip resistance), the electric potential of the p-stop, and the punch-through-protection (PTP)...
Marta Baselga Bacardit
(Universidad de Valencia (ES))
18/02/2013, 17:00
In the framework of the RD50 collaboration New p-type pixel detectors with small gain will soon be fabricated in the clean room at the CNM. Our new design will allow for thinner structures with moderate multiplication factors and ultra short collection times. The mask of the new structures will be presented and the results of some electrical simulations on these new devices will be discussed.
Gregor Kramberger
(Jozef Stefan Institute (SI))
18/02/2013, 17:20
Silicon diodes with special design of the implant - so called ``spaghetti diodes'' - were used to study the impact of implantation process on charge multiplication after irradiations to very large equivalent fluences of 8e16 cm-2. The samples were found to work even at this unprecedented levels of irradiation. Different implantation processes were implemented on samples for studying the impact...
Hartmut Sadrozinski
(SCIPP, UC santa Cruz)
18/02/2013, 17:40
Ultra-fast silicon sensors will combine short collection time with internal gain. I will present motivation, principle of operation, implementation and first results for ultra-fast silicon sensors.
