Speaker
Alyssa Montalbano
(State University of New York (US))
Description
With the need for very radiation hard semiconductor devices for the High Luminosity upgrade at the Large Hadron Collider, new types of silicon pixel detectors have been proposed. Since 3D Si pixel detectors have been shown to be more radiation hard than the planar ones, scientists at Brookhaven National Laboratory have chosen to design a novel type of 3D Si pixel detectors. Systematic full 3D simulations using Silvaco’s TCAD programs have been done to compare the characteristics of this novel 3D pixel design which features at least one trench electrode in a single pixel cell (3D-Trench Electrode pixel) with the 3D pixel with all column electrodes in a single pixel cell. Each cell of the 3D-Trench Electrode pixel detector has a concentric trench electrode surrounding the central collecting column electrode. The detector is an array of these individual cells. The 3D simulations show a much lower depletion voltage and a more uniform electric field in the new 3D-Trench Electrode pixel detectors as compared to the 3D Column Electrode detectors. We’ve created two sizes of this pixel, a small one (short electrode spacing in a single cell) for High Energy physics applications in high radiation environments and a much larger one for Photon Science applications at the National Synchrotron Light Source II at Brookhaven National Laboratory. The first prototype 3D-Trench Electrode pixel detectors have been manufactured at the National Microelectronics Centre, and are currently being tested. The electrical measurements have been done and the charge collection efficiency measurements will be made and presented.
Author
Alyssa Montalbano
(State University of New York (US))
Co-authors
Daniela Bassignana
(CNM)
Dr
David Lynn
(Brookhaven National Laboratory (US))
Dr
Dmitri Tsybychev
(Stony Brook University (US))
Giulio Pellegrini
(Universidad de Valencia (ES))
Shuhuan Liu
(Xi'an Jiaotong University)
Wei Chen
(Brookhaven National Laboratory)
Zheng Li
(BNL)
