2–4 Jun 2008
Ljubljana, Slovenia
Europe/Zurich timezone

Analysis of deep level system transformation by photoionization spectroscopy

2 Jun 2008, 10:00
20m
Ljubljana, Slovenia

Ljubljana, Slovenia

Defect and Material Characterization Defect and Material Characterization

Speaker

Prof. Juozas Vaitkus (Inst. of Mater. Sci. & Appl. Res. (IMSAR) - Vilnius University)

Description

The photoconductivity spectrum in extrinsic regiono was measured in irradiated Si samples at 18 K temperature. The samples were treated by isochronal annealing in a range 80-250 C. The deep levels were resolved by use of Lucovsky model. A series of levels was observed and a number of deep centers and their contribution on the photoconductivity were dependent on annealing. The comparison of photoconductivity spectra data and the results obtained by DLTS and TSC in other groups in the same series of samoles was performed.

Author

Prof. Juozas Vaitkus (Inst. of Mater. Sci. & Appl. Res. (IMSAR) - Vilnius University)

Co-authors

Prof. Vaidotas Kazukauskas (Vilnius University, Institute of Materials Science and Applied Research) Mr Vidmantas Kalendra (Vilnius University, Institute of Materials Science and Applied Research)

Presentation materials