Speaker
Prof.
Juozas Vaitkus
(Inst. of Mater. Sci. & Appl. Res. (IMSAR) - Vilnius University)
Description
A comparative analysis of the recombination, generation and reverse recovery lifetime dependent on stopped protons fluence and isochronal anneal temperature is presented for FZ Si structures. In DLTS, heat treatments indicate transformations of majority and minority carrier traps. These changes are also revealed by variations of the excess carrier decay lifetime. The main transformations can be attributed to hydrogen implantation related defects (VOH etc). Also, a comparative study of the impact of penetrative neutrons and protons on recombination and DLTS characteristics in MCz, FZ and epi-Si structures has been carried out. A nearly linear decrease of the recombination lifetime with fluence of the reactor neutrons from 1012 to 3×1016 n/cm2 in the MCz grown Si samples corroborates a non-linear introduction rate of dominant recombination centers. An increase of lifetime and a change of carrier decay shape (process) in reactor neutrons irradiated MCZ Si, dependent on fluence, appears under annealing at elevated temperatures (>180 C, for 24 h). Lifetime behavior with heat treatment temperature shows an enhancement of competition between recombination and trapping centers which is the most pronounced for moderate fluences irradiated material.
Author
Prof.
Juozas Vaitkus
(Inst. of Mater. Sci. & Appl. Res. (IMSAR) - Vilnius University)
Co-authors
Mr
Aurimas Uleckas
(Vilnius University, Institute of Materials Science and Applied Research)
Dr
Eugenijus Gaubas
(Vilnius University, Institute of Materials Science and Applied Research)
Prof.
Jyrki Raisanen
(University of Helsinki)
Mr
Tomas Ceponis
(Vilnius University, Institute of Materials Science and Applied Research)
