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12th RD50 Workshop

2–4 Jun 2008
Ljubljana, Slovenia
Europe/Zurich timezone

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Session

Defect and Material Characterization

2 Jun 2008, 09:30
Ljubljana, Slovenia

Ljubljana, Slovenia

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  1. 24. Overview of results from the WODEAN collaboration
    Gordon Davies (King's College London)
    02/06/2008, 09:30
    Defect and Material Characterization
    QUANTITATIVE EFFECTS OF NEUTRON IRRADIATION ON SILICON RADIATION DETECTORS -Overview of results from the WODEAN* collaboration- M.K. Bocka, G. Daviesb, D. Ecksteina, E. Fretwursta, E. Gaubasc, A. Junkesa, P. Kaminskid, K. Kaskae, V. Khomemkova, G. Krambergerf, J. Langea, G. Lindströma, L. Makarenkog, D. Menichellih, M. Molle, R. Morih, L. Murinj, M. Pawlowskid, I. Pintiliek, B....
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  2. 7. Analysis of deep level system transformation by photoionization spectroscopy
    Prof. Juozas Vaitkus (Inst. of Mater. Sci. & Appl. Res. (IMSAR) - Vilnius University)
    02/06/2008, 10:00
    Defect and Material Characterization
    The photoconductivity spectrum in extrinsic regiono was measured in irradiated Si samples at 18 K temperature. The samples were treated by isochronal annealing in a range 80-250 C. The deep levels were resolved by use of Lucovsky model. A series of levels was observed and a number of deep centers and their contribution on the photoconductivity were dependent on annealing. The comparison...
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  3. 18. Study of cluster related effects in n-irradiated Epi-Do and MCz diodes
    Alexandra Junkes (Unversity of Hamburg, Germany)
    02/06/2008, 10:20
    Defect and Material Characterization
    Isochronal annealing studies have been performed on neutron-irradiated Epi-Do and MCz diodes. The MCz diode, irradiated with 3E11 n/cm², was investigated with DLTS. The annealing results of cluster related defects will be presented and compared to reverse current data. After injection of 1 Ampere forward current, a bistable effect of the cluster related defects E4 and E5 was observed. Further...
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  4. 6. Fluence and isochronal anneal dependent variations of recombination and DLTS characteristics in neutron and proton irradiated MCz , FZ and epi-Si structures
    Prof. Juozas Vaitkus (Inst. of Mater. Sci. & Appl. Res. (IMSAR) - Vilnius University)
    02/06/2008, 11:10
    A comparative analysis of the recombination, generation and reverse recovery lifetime dependent on stopped protons fluence and isochronal anneal temperature is presented for FZ Si structures. In DLTS, heat treatments indicate transformations of majority and minority carrier traps. These changes are also revealed by variations of the excess carrier decay lifetime. The main transformations can...
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  5. 25. Discussion Session on Defect and Material Characterization
    Gordon Davies (King's College London), Mara Bruzzi (INFN and University of Florence)
    02/06/2008, 11:30
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