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12th RD50 Workshop

2–4 Jun 2008
Ljubljana, Slovenia
Europe/Zurich timezone

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Session

Full Detector Systems

3 Jun 2008, 10:40
Ljubljana, Slovenia

Ljubljana, Slovenia

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  1. 4. Summary: 3rd Workshop on Advanced Silicon Radiation Detectors (3D and P-type Technologies)
    Lozano Manuel (CNM)
    03/06/2008, 10:40
    A summary on the presentation given on the "3rd Workshop on Advanced Silicon Radiation Detectors (3D and P-type Technologies) ", held 14-16 April 2008 at the Residencia CSIC-Generalitat de Catalunya, Barcelona, Spain will be presented. Main focus will be on presentations and topics that are not covered by presentations given on this workshop. <a...
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  2. 5. Beam telescope for testing p- and n-type detectors
    Dr Panja-Riina Luukka (Helsinki Institute of Physics HIP)
    03/06/2008, 11:10
    We constructed in 2007 a beam telescope based on CMS Tracker data acquisition prototype cards and APV25 readout chips. The telescope has 8 silicon strip reference detectors and slots for a couple of test modules. The impact point precision of the reference tracks at the location of the test modules is 4 um, the S/N of the telescope is 25 and it has an active area of 4 cm x 4 cm. The telescope...
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  3. 16. Irradiated MCz sensors for a testbeam
    Martin Frey (IEKP, Universität Karlsruhe)
    03/06/2008, 11:30
    Full Detector Systems
    For testing signal-to-noise, efficiency and resolution of highly irradiated MCz-sensors, a beamtest will take place at CERN this summer, making use of the new beam telescope SiBT. The sensors were produced at the Helsinki Institute of Physics and were irradiated with protons in Karlsruhe and with neutrons in Louvain-la-Neuve. The data of the measured sensor parameters before and after...
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  4. 12. Charge collection measurements on MICRON RD50 strip detectors and diodes irradiated with protons, pions and neutrons
    Gregor Kramberger (Jozef Stefan Institute)
    03/06/2008, 11:50
    Defect Engineering and Pad Detector Characterization
    The systematic studies of charge collection were performed on strip and pad detectors of n and p type produced on Fz and MCz silicon. The detectors were irradiated with 24 GeV protons, 200 MeV pions and reactor neutrons up to equivalent fluences of 1.2e15 cm-2. It was shown that the to larger extent the CCE is determined by Vfd for both strips and pads. Although strip detectors perform better...
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  5. 1. New CCE results with microstrip detectors made on various substrates
    Gianluigi Casse (Department of Physics)
    03/06/2008, 13:40
    The charge collection efficiency of µ-strip sensors made with the RD50 mask set with various silicon substrates (n and p FZ and MCz) have been compared to different high doses of neutron and protons, well in the range of the anticipated fluences in SLHC.
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  6. 17. Measurement of charge collection in p-type microstrip sensors with SCT128 chip
    Igor Mandic (Jožef Stefan Institute)
    03/06/2008, 14:00
    Full Detector Systems
    Results of charge collection measurements with SCT128 chip will be presented. Measurements were made with miniature p-type microstrip sensors with n-side readout produced by Micron. Sensors were irradiated with neutrons up to 1 MeV equivalent fluence of 3e15 n/cm2. Collected charge as a function of bias voltage was measured up to 2000 V.
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  7. 28. Discussion on Full Detector Systems
    Gianluigi Casse (Department of Physics)
    03/06/2008, 14:20
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