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13:35
TCAD for Radiation, a review
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Fco. Rogelio Palomo Pinto
(School of Engineering University of Sevilla)
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13:55
A Single Event Effects tool for VLSI designers
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Fco. Rogelio Palomo Pinto
(School of Engineering University of Sevilla)
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14:15
Experimental study of the Si-SO2 interface region in p+n-silicon strip sensors before and after X-ray irradiation
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Thomas Poehlsen
(University of Hamburg)
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14:35
Simulations of Hadron Irradiated n+p- Si Strip Sensors Incorporating Bulk and Surface Damage
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Ranjeet Ranjeet
(University of Delhi (IN))
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14:55
Non-uniform 3-level defect model and status of edge-TCT simulations
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Timo Hannu Tapani Peltola
(Helsinki Institute of Physics (FI))
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15:45
Contribution from Eg(T) dependence into parameterization of the bulk generation current of irradiated Si detectors
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Vladimir Eremin
(Ioffe Physical-Technical Institute of Russian Academy of Sciences, St. Petersburg, Russia)
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16:05
Update on the temperature dependence of the bulk current in Si (remote)
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Alexandre Chilingarov
(Lancaster University (GB))
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16:25
Trapping related negative feedback as the reason for collected charge restriction in heavily irradiated Si detectors operating with avalanche multiplication
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Elena Verbitskaya
(Ioffe Physical-Technical Institute of Russian Academy of Sciences, St. Petersburg, Russia)
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16:45
Comparison of Radiation Hardness Properties of p+n- & n+p- Si Strip Sensors Using Simulation Approach
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Ranjeet Ranjeet
(University of Delhi (IN))
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17:05
TCAD simulations and beam tests: measuring the electric field in irradiates sensors
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Marco Bomben
(Centre National de la Recherche Scientifique (FR))
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17:25
T-CAD simulation of Lorentz angle
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Andreas Matthias Nurnberg
(KIT - Karlsruhe Institute of Technology (DE))
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17:45
Discussion on Simulations
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Vladimir Eremin
(Ioffe Physical Technical Institute of Russian Academy of Scienc)
