23rd RD50 Workshop (CERN)

Session

Detectors with Charge Multiplication

13 Nov 2013, 12:20

CERN

Conveners

Detectors with Charge Multiplication

• Giulio Pellegrini (Universidad de Valencia (ES))
• Giulio Pellegrini (Universidad de Valencia (ES))

18. Charge Collection Measurements on Dedicated RD50 Charge Multiplication SSDs

Christopher Betancourt (Freiburg University)

13/11/2013, 13:30

The Collection charge of specially designed charge multiplication silicon strip detectors produced by MICRON Semiconductor Co. Ltd. within the CERN RD50 framework is investigated. Charge collection measurements are performed before and after irradiation with a proton fluence of 1e15 and a neutron fluence ranging from 1-5e15 1 MeV neq /cm2 (neq /cm2). Structures and modifications on these...

33. Status of Silicon Strip Sensor Measurements at Liverpool

Sven Wonsak (University of Liverpool (GB))

13/11/2013, 13:50

First charge collection results with room temperature annealed dedicated RD50 charge multiplication sensors will be presented, at 1e15 neq/cm2 and 5e15 neq/cm2. The multiplication sensors feature many different structures specially designed to take advantage of multiplication after heavy irradiation. These devices were produced by Micron Semiconductor Ltd (UK). To investigate the current...

17. A parametrization of the performance of Ultra-Fast Silicon detector

Mr Nicolo Cartiglia (INFN)

13/11/2013, 14:10

Using data from existing silicon pixel systems, a model to estimate the performance of UFSD is presented.

34. Thermal characterization of Low Gain Avalanche Detectors (before 4pm)

Marcos Fernandez Garcia (Universidad de Cantabria (ES))

13/11/2013, 15:00

We have studied the thermal characteristics of few tens of Low Gain Avalanche Diodes (LGAD) produced by CNM-Barcelona. Changes of gain and noise as a function of temperature are reported. 2D-mappings of gain over the surface of the detectors have also been measured.

9. Studies of LGAD diodes in Ljubljana (an update)

Gregor Kramberger (Jozef Stefan Institute (SI))

13/11/2013, 15:20

A large set of diodes was characterized before irradiations and after neutron irradiations with different techniques CV/IV/TCT/CCE. It was found that large spread of device leakage current before irradiation has no impact on gain (constant within 15% for all samples) of the devices, but it does on noise. The excess current seem no to be related to the bulk current and there are indications...

31. First results of new p-type strip and pad detectors with LGAD in epitaxial wafers (remote, afternoon)

Mrs Marta Baselga (CNM (Barcelona))

13/11/2013, 15:40

In the framework of the RD50 collaboration new p-type devices with LGAD in epitaxial wafers and float zone wafers were fabricated in CNM. Here we present first results of strips and pad detectors.

3. Electrical and alpha TCT measurements on LGAD produced by CNM (not on Wed. morning)

Hartmut Sadrozinski (SCIPP, UC santa Cruz)

13/11/2013, 16:00

WE have performed I-V, C-V and alpha TCT measurements

12. Discussion on LGAD and other detectors with Avalanche

Dr Giulio Pellegrini (CNM-IMB-CSIC (ES))

13/11/2013, 16:20

Discussion on measurements and the technology developed for the fabrication of Low Gain Avalanche Detectors (LGAD) for tracking applications.