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23rd RD50 Workshop (CERN)
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CERN
CERN
503-1-001 (Council Chamber) on 13th Nov & 222-R-001 (Filtration Plant) on 14th & 15th Nov.
Michael Moll
(CERN)
Description
23rd RD50 Workshop on Radiation hard semiconductor devices
for very high luminosity colliders
Participants
Alessandro La Rosa
Alexander Zaluzhnyi
Alexandra Junkes
Alexandre Chilingarov
Andreas Nürnberg
Anna Macchiolo
Arno Kompatscher
Botho Paschen
Christian Gallrapp
Christopher Betancourt
Dimitrios Loukas
Donato Creanza
Eckhart Fretwurst
Elena Verbitskaya
Ercan Pilicer
Eugene Grigoriev
Fco. Rogelio Palomo Pinto
Francisca Muñoz Sánchez
Geetika Jain
Georg Steinbrueck
Gianluigi Casse
Giulio Pellegrini
Gregor Kramberger
Hannes Neugebauer
Hartmut Sadrozinski
Igor Mandić
Igor Rubinskiy
Ioana Pintilie
Jaakko Härkönen
Jennifer Sibille
Jiri Popule
Juozas Vaitkus
Jörn Lange
Kavita Lalwani
Marcela Mikestikova
Marcin Bartosik
Marco Bomben
Marcos Fernandez Garcia
Maria Carna
Matteo Centis Vignali
Maurice Glaser
Michael Moll
Miguel Ullan
Monica Scaringella
Nicolo Cartiglia
Ralf Röder
Ranjeet Dalal
Riccardo Mori
Salvador Hidalgo
Salvatore My
Sonia Fernandez
Stefano Meroli
Stefano Terzo
Susanne Kuehn
Sven Wonsak
Thomas Poehlsen
Tilman Rohe
Timo Hannu Tapani Peltola
Tobias Wittig
Tuure Tuuva
Ulla Tihinen
Veronique Wedlake
Virginia Greco
Vitaliy Fadeyev
Vladimir Cindro
Vladimir Eremin
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09:30
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10:00
Workshop registration
- 10:00 → 10:10
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10:10
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12:21
Defect and Pad Detector CharacterizationConvener: Eckhart Fretwurst (II. Institut fuer Experimentalphysik)
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10:10
PECULIARITIES OF DARK CONDUCTIVITY IN IRRADIATED SILICON (not Friday) 20mThe electrical properties of the irradiated by neutrons Si are analyzed by means of the Hall effect and magnetoresistance temperature dependence in a few series of Si samples. It is demonstrated that the electron mobility decrease with temperature as a power law with index less than in the nonirradiated silicon and can become near to one in the highly irradiated silicon. The analyze of contribution of the local levels showed a possibility to approximate the temperature dependence by V2 and V3 contribution in the samples irradiated up to 3e14 cm-2. In a higer irradiated samples the activation energy depended on the fluence and a modified model of the cluster and its environment is proposed.Speaker: Prof. Juozas Vaitkus (Vilnius University)
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10:30
Initial acceptor removal in p-type silicon detectors 20mInitial acceptor removal in p-type silicon detectors was studied for different samples after reactor neutron and 24 GeV proton irradiations. Although at HL-LHC fluences the initial acceptor removal is not important for standard detectors, it may play an important role in changing the properties of the multiplication layer of LGAD devices and consequent reduction of gain. A set of simple pad detectors with different resistivities was irradiated and parameters of acceptor removal studied.Speaker: Gregor Kramberger (Jozef Stefan Institute (SI))
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10:50
Preliminary results on measurements of surface recombination velocity on SLIM edges passivated Si (not Friday) 20mThe light pulse excited microwave conductivity decay method for surface recombination rate measurement is presented. The preliminary results are performed in the differently passivated silicon samples surface.Speaker: Prof. Juozas Vaitkus (Vilnius University)
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11:10
Coffee Break 20m
- 11:30
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11:41
Systematic investigation of p-irradiated Micron pad detectors of different silicon materials 20mA clear understanding of the underlying physics is essential for the evaluation of detectors in high energy physics. For this purpose Micron detectors of different silicon types (FZ, MCz, n-bulk, p-bulk) provided by the RD50 collaboration have been irradiated with 24GeV protons at CERN PS up to fluences of 3e16 neq/cm2. In addition to the characteristics of leakage current (IV), capacitance (CV) and effective doping concentration (Neff) dependent on the fluence and the temperature, signals of the transient current technique (TCT) were systematically analysed to investigate the charge collection efficiency (CCE) using red and IR Laser illumination. Results and further plans of these studies will be presented.Speaker: Hannes Neugebauer (Hamburg University (DE))
- 12:01
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10:10
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12:20
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17:00
Detectors with Charge MultiplicationConveners: Giulio Pellegrini (Universidad de Valencia (ES)), Giulio Pellegrini (Universidad de Valencia (ES))
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12:20
Lunch Break 1h 10m
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13:30
Charge Collection Measurements on Dedicated RD50 Charge Multiplication SSDs 20mThe Collection charge of specially designed charge multiplication silicon strip detectors produced by MICRON Semiconductor Co. Ltd. within the CERN RD50 framework is investigated. Charge collection measurements are performed before and after irradiation with a proton fluence of 1e15 and a neutron fluence ranging from 1-5e15 1 MeV neq /cm2 (neq /cm2). Structures and modifications on these devices include implants processed with increased diffusion times and energies, different sensor thicknesses, the use of intermediate biased or floating strips between the readout strips, and several different strip width and pitch geometries. The charge collection for these devices is compared to standard FZ 300 μm thick silicon strip sensors having a strip width=25 μm and pitch=80 μm. Several sensors exhibit enhancement of the collected charge compared to the standard sensor after irradiation. Measurements include position resolve studies using an IR laser in order to investigate low and high field regions near the detector surface.Speaker: Christopher Betancourt (Freiburg University)
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13:50
Status of Silicon Strip Sensor Measurements at Liverpool 20mFirst charge collection results with room temperature annealed dedicated RD50 charge multiplication sensors will be presented, at 1e15 neq/cm2 and 5e15 neq/cm2. The multiplication sensors feature many different structures specially designed to take advantage of multiplication after heavy irradiation. These devices were produced by Micron Semiconductor Ltd (UK). To investigate the current dependence of irradiated silicon strip detectors, ATLAS07 sensors were irradiated at Birmingham with doses up to 1e15 neq/cm2. CV and IV measurements were performed at different temperatures which allow verification of the temperature scaling formula. Additionally, the correlation of leakage current and the irradiated fluence will be presented.Speaker: Sven Wonsak (University of Liverpool (GB))
- 14:10
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14:30
Coffee Break 30m
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15:00
Thermal characterization of Low Gain Avalanche Detectors (before 4pm) 20mWe have studied the thermal characteristics of few tens of Low Gain Avalanche Diodes (LGAD) produced by CNM-Barcelona. Changes of gain and noise as a function of temperature are reported. 2D-mappings of gain over the surface of the detectors have also been measured.Speaker: Marcos Fernandez Garcia (Universidad de Cantabria (ES))
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15:20
Studies of LGAD diodes in Ljubljana (an update) 20mA large set of diodes was characterized before irradiations and after neutron irradiations with different techniques CV/IV/TCT/CCE. It was found that large spread of device leakage current before irradiation has no impact on gain (constant within 15% for all samples) of the devices, but it does on noise. The excess current seem no to be related to the bulk current and there are indications that it evenly distributed over the surface. Irradiations decrease the gain significantly for both high and low gain devices. As the decrease of electric field in the multiplication layer may be due to removal of shallow acceptor a set of simple diodes with different resistivities was irradiated and parameters of acceptor removal studied.Speaker: Gregor Kramberger (Jozef Stefan Institute (SI))
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15:40
First results of new p-type strip and pad detectors with LGAD in epitaxial wafers (remote, afternoon) 20mIn the framework of the RD50 collaboration new p-type devices with LGAD in epitaxial wafers and float zone wafers were fabricated in CNM. Here we present first results of strips and pad detectors.Speaker: Mrs Marta Baselga (CNM (Barcelona))
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16:00
Electrical and alpha TCT measurements on LGAD produced by CNM (not on Wed. morning) 20mWE have performed I-V, C-V and alpha TCT measurementsSpeaker: Hartmut Sadrozinski (SCIPP, UC santa Cruz)
- 16:20
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12:20
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17:15
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19:00
Collaboration Board Meeting: (closed session)Convener: Gregor Kramberger (Jozef Stefan Institute (SI))
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09:30
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10:00
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09:00
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12:25
Full Detector SystemsConvener: Gregor Kramberger (Jozef Stefan Institute (SI))
- 09:00
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09:30
Radiation hard silicon sensors for the CMS tracker upgrade (Not Wednesday early morning) 35mAt an instantaneous luminosity of 5 × 1034 cm−2 s−1, the high-luminosity phase of the Large Hadron Collider (HL-LHC) is expected to deliver a total of 3000 fb−1 of collisions, hereby increasing the discovery potential of the LHC experiments significantly. However, the radiation dose of the tracking systems will be severe, requiring new radiation hard sensors for the CMS tracker. The CMS tracker collaboration has initiated a large material investigation and irradiation campaign to identify the silicon material and design that fulfills all requirements for detectors for the high-luminosity phase of the Large Hadron Collider (HL-LHC). Focusing on the upgrade of the outer tracker region, pad diodes as well as fully functional strip sensors have been implemented on silicon wafers with different material properties and thicknesses. The samples were irradiated with a mixture of neutrons (1 MeV) and protons (23 MeV, 800 MeV and 23 GeV) corresponding to fluences as expected for the positions of detector layers in the future tracker. Three different proton energies were used for irradiations to investigate the energy dependence of the defect generation in oxygen rich material. The measurements performed on the structures include electrical sensor characterization, measurement of the collected charge injected with a beta source or laser light and bulk defect characterization. In this talk, results and conclusions of the campaign are presented, with a focus on the recent decision to use p-bulk silicon strip sensors in the outer tracker of CMS.Speaker: Dr Georg Steinbrueck (Hamburg University (DE))
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10:05
Investigation of non gaussian noise in irradiated p-on-n sensors 20mIn the CMS campaign to find the new baseline material for the next tracker, irradiated p-on-n sensors showed a non-gaussian noise behaviour. The effect has been quantified and studied systematically as a function of the applied bias voltage and sensor annealing, as well as irradiation fluence, particle type and energy and sensor geometry. In some operation area, this effect would lead to an noise occupancy of the sensor of over 10%, which makes this p-on-n sensors unuseful as a tracking device. The dependence on the sensor geometry (strip pitch and w/p ratio) indicates, that a high electric field at the strip side promotes the effect. T-CAD simulations of irradiated strip sensors showed an intrinsically higher electric field at the front side of p-on-n sensors compared to n-on-p sensors, thus making the occurence of the effect more likely in p-on-n sensors.Speaker: Andreas Matthias Nurnberg (KIT - Karlsruhe Institute of Technology (DE))
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10:25
Coffee Break 30m
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10:55
ATLAS12A Endcap Mini Sensors Electrical Testing 20mElectrical tests of ATLAS12A EndCap mini sensors manufactured by HPK were performed in Freiburg, Prague and Valencia. Results of leakage current and full depletion voltage as well as coupling capacitance, bias resistance, inter-strip capacitance and resistance and punch-trough measurements on non-irradiated sensors will be presented.Speaker: Marcela Mikestikova (Acad. of Sciences of the Czech Rep. (CZ))
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11:15
Silicon Sensors Irradiation Study for ILC Extreme Forward Calorimetry 20mWe are working on the proposed small angle calorimeter for ILC, "BeamCal". The detector, which is envisioned as a tungsten sandwich calorimeter, will be subject to high fluences EM radiation that will shower in the tungsten radiator. We are doing studies that explore the effects of radiation damage on candidate sensors at shower-max within the induced shower. In addition to electrons, positrons and photons, these showers will contain a flux of neutrons from the de-excitation of the giant dipole resonance that may significantly contribute to radiation damage. The anticipated fluence of the order of 100 MRad/year instigated studies of exotic sensor materials, such as GaAs. Instead, we are studying conventional silicon sensors as an alternative. A major part of our efforts was beam test at SLAC electron beam facility in June and July of 2013. Silicon strip sensors of different types have been irradiated up to the dose of 220 MRad. We will describe the first charge collection results and on-going annealing studies.Speaker: Vitaliy Fadeyev (University of California,Santa Cruz (US))
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11:35
Status of the Low Resistance Strip Sensors Project 20mAn update will be presented on the status of the LowR project. General performance results from the first Low-R sensors fabricated at the clean room of CNM-Barcelona will be shown (technological parameters, IV, CV). Results on the tests on other important sensor parameters like strip resistance, inter-strip isolation, and pulse shape will also be presented. First tests on the PTP structures behaviour indicate that some technological issues should still be solved in order to have a full PTP performance. Yet, initial laser tests that emulate beam loss and enable dynamic measurements show promising reduction of the strip peak voltage. New sensors with corrected design are being processed that will allow a full demonstration of this technology. The optimization and solutions proposed for the second batch, will be detailed, together with new technological proposals to be implemented.Speaker: Dr Miguel Ullan Comes (Universidad de Valencia (ES))
- 11:55
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12:25
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19:10
Device Simulations and some key experimental dataConvener: Vladimir Eremin (Ioffe Physical Technical Institute of Russian Academy of Scienc)
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12:25
Lunch Break 1h 10m
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13:35
TCAD for Radiation, a review 20mWe present a compendium of our latest works about simulation of radiation effects in electronics using Sentaurus TCAD. Adapting the tool, we simulate pulsed laser ionization effects, ion tracks, total ionization dose and displacement damage.Speaker: Dr Fco. Rogelio Palomo Pinto (School of Engineering University of Sevilla)
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13:55
A Single Event Effects tool for VLSI designers 20mWe present our SEE circuital simulation tool. It leverages from the Cadence design suite, makes automatic placement of SEE sources and uses heuristics to determine circuit sensitivities.Speaker: Dr Fco. Rogelio Palomo Pinto (School of Engineering University of Sevilla)
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14:15
Experimental study of the Si-SO2 interface region in p+n-silicon strip sensors before and after X-ray irradiation 20mThe Si-SO2 interface region in a DC-coupled p+n-silicon strip sensors has been studied by TCT measurements for eh-pairs produced by focused, sub-nanosecond laser light with wavelengths of 660 nm and 830 nm. Charge losses of either electrons or holes have been observed. The charge losses depend on the biasing history; after changing the sensor voltage, they change, with time constants between tens of minutes and several days, depending on humidity. The observations are qualitatively explained by detailed TCAD simulations: the charge losses depend on the charge distribution on the surface of the sensor, which is in a non-equilibrium state after changing the sensor voltage. The big difference in time constants in reaching the equilibrium is due to the strong dependence of the surface resistivity on humidity. Results before and after irradiation to 1 MGy (~10 keV X-rays) will be presented. The results are relevant for defining the surface boundary conditions when simulating segmented silicon sensors for different surface damages. The measured dependence of the charge losses on wavelength is compatible with simulations of the electric field close to the Si-SiO2 interface: a region of zero electric field (saddle point of the potential) in the center between p+ strips, about 5 mum from the Si-SiO2 interface. Using simulated weighting potentials for the strips and the backplane, the extension and properties of the electron accumulation layer at the Si-SiO2 interface for the different experimental conditions is extracted before and after X-ray irradiation. The extension of the accumulation layer strongly influences the breakdown conditions at the edges of the p+implants, and thus the breakdown voltage of the sensor.Speaker: Thomas Poehlsen (University of Hamburg)
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14:35
Simulations of Hadron Irradiated n+p- Si Strip Sensors Incorporating Bulk and Surface Damage 20mThe future upgrade of LHC to the SLHC, with the goal for over an order of magnitude higher luminosity (> 1035 cm -2 s -1) and over 4 times more integrated luminosity (3000fb-1) have posed challenges to develop the extreme radiation hard Si sensors. To address the problem, extensive measurements and simulations studies aimed for ATLAS and CMS tracker requirements have been initiated which are investigating different designs, materials and polarity for Si microstrip sensors. Si sensors installed in the tracker region are exposed to both charged and neutral radiation, undergo both surface damage and bulk damage. Most of the efforts to simulate the radiation effects on Si sensors in the past concentrated either studying surface damage or the bulk damage model only. However, in Si sensors degrading effects due to both take place simultaneously. In the present work, extensive simulations have been carried out for the p-type of Si microstrip sensors incorporating both surface and bulk damage together. The surface damage is incorporated using different amount of surface oxide charge density between interface of Si and SiO2 while bulk damage is included by a new trap model. Simulations of various properties of Si strip sensors, like Interstrip Resistance (Rint) and Interstrip Capacitance (Cint) have been carried out and compared against the measurements on sensors. The results are in agreement and help to understand the underlying physics of radiation damage to some extent. Further, the simulations for different p-stop designs are presented and regions of critical field are investigated to propose possible design for future detectors.Speaker: Ranjeet Ranjeet (University of Delhi (IN))
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14:55
Non-uniform 3-level defect model and status of edge-TCT simulations 20mProton model (effective 2-defect model based on the EVL model) used in Synopsys Sentaurus package, has proven to produce matching simulation results with measurements. However, at high fluence (> 1e15 cm-2) and thus high oxide charge, the model does not produce radiation enhanced isolation to the strips, observed in a real p-type detector. Also simulated Cint and CCE loss in the center of the pitch reflect this shortcoming. Novel non-uniform 3-level defect model solves these problems without affecting the experimentally matching simulation results of proton model. Edge-TCT provides a method for the measurement of the drift velocity of the charge carriers as a function of depth. This could make it possible to extract electric field distribution in the detector bulk. Comparison of non-irradiated/irradiated device edge-TCT simulations with measurements will be presented.Speaker: Timo Hannu Tapani Peltola (Helsinki Institute of Physics (FI))
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15:15
Coffee Break 30m
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15:45
Contribution from Eg(T) dependence into parameterization of the bulk generation current of irradiated Si detectors 20mThe influence of the bandgap temperature dependence Eg(T) on the parameters of irradiated Si detectors extracted from I(T) measurements was analyzed via transformation of “statistical” form of the rate equation for the current generation to the “activation” form. The energy of the current generation, Et = 0.65 eV, was defined for the single effective level I(T) parameterization. The two level model based on the contribution from effective DDs and DAs positioned at Ev + 0.48 eV and Ec - 0.52 eV, respectively, was adapted for simultaneous calculation of the reverse current and the electric field distribution in irradiated detectors. The results of the study show that both models fit well to the experimental data and the contribution of the Eg(T) dependence to Et does not exceed 5%.Speaker: Dr Vladimir Eremin (Ioffe Physical-Technical Institute of Russian Academy of Sciences, St. Petersburg, Russia)
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16:05
Update on the temperature dependence of the bulk current in Si (remote) 20mNew data on the temperature dependence of the current generated in Si bulk are presented. Modification of the test set-up allowed measurements with the sensor irradiated by 1E+16 neq per square cm.Speaker: Alexandre Chilingarov (Lancaster University (GB))
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16:25
Trapping related negative feedback as the reason for collected charge restriction in heavily irradiated Si detectors operating with avalanche multiplication 20mEnhancement of the collected charge Qc in Si detectors irradiated beyond 10^15 neq/cm2 is analyzed basing on the PTI model and compared with the internal gain in avalanche photodiodes. The results show that in heavily irradiated Si detectors Qc enhancement due to avalanche multiplication is strongly restricted and simultaneously stabilized by the negative feedback arisen from carrier trapping, which is an inherent property of the diodes with high concentration of deep level defects in the sensitive bulk. This negative feedback reduces the sensitivity of the internal Qc gain to the design of the detector high electric field region.Speaker: Dr Elena Verbitskaya (Ioffe Physical-Technical Institute of Russian Academy of Sciences, St. Petersburg, Russia)
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16:45
Comparison of Radiation Hardness Properties of p+n- & n+p- Si Strip Sensors Using Simulation Approach 20mTo address the problems caused by intense radiation environment in planned SLHC tracker, extensive measurements and simulations studies aimed for CMS tracker requirements have been initiated which are investigating different designs, materials and polarity for Si microstrip sensors. One of the most important task is to compare the sustainability of p+n- and n+p- type of Si strip sensors after different level of radiation damages. In the present work, extensive simulations have been carried out for the n-type and p-type of Si microstrip sensors incorporating surface damage and bulk damage together. The simulations have been performed using Silvaco TCAD tools. The surface damage is incorporated using different amount of surface oxide charge density between interface of Si and SiO2 while bulk damage is included by a new trap model. Various properties of n-type and p-type sensors have been compared for different levels of radiation damage. Further, observed higher microdischarge rate in measured irradiated n-type Si strip sensors is explained using a qualitative model and electric field simulations.Speaker: Ranjeet Ranjeet (University of Delhi (IN))
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17:05
TCAD simulations and beam tests: measuring the electric field in irradiates sensors 20mBeam test data and simulations can make accessible the electric field profile of silicon sensors. Different bulk materials, irradiation and annealing scenarios can be contrasted thanks to the charge profile technique (e.g.: T. Lari and C. Troncon, IEEE TNS, VOL. 53, NO. 5, OCTOBER 2006; V. Chiochia, IEEE TNS, VOL. 52, NO. 4, AUGUST 2005) High pointing resolution telescopes and detailed TCAD simulations are needed to complete this task. I will present a project for beam tests and simulations campaigns.Speaker: Marco Bomben (Centre National de la Recherche Scientifique (FR))
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17:25
T-CAD simulation of Lorentz angle 20mT-CAD simulations are a powerful tool for understanding the properties of silicon sensors. Silvaco T-CAD allows the implementation of magnetic fields of several Tesla in the simulation. Using this simulation package, Lorentz angle measurements on strip sensors have been reproduced. Results on non-irradiated devices and the ongoing work of implementing radiation damage using an effective trap model will be presented.Speaker: Andreas Matthias Nurnberg (KIT - Karlsruhe Institute of Technology (DE))
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17:45
Discussion on Simulations 1hSpeaker: Vladimir Eremin (Ioffe Physical Technical Institute of Russian Academy of Scienc)
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12:25
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19:30
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23:30
Dinner
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09:00
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12:25
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13:10
3D detectors and slim edgesConveners: Giulio Pellegrini (Universidad de Valencia (ES)), Giulio Pellegrini (Universidad de Valencia (ES))
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09:00
Update on irradiation experiments with electrons of different kinetic energies (between 1.5 MeV and 27 MeV) performed on n-type silicon [Not on Wednesday] 20mStudies regarding the radiation damage induced by electrons of different kinetic energies, from 1.5 MeV to 27 MeV, are presented. The aim is to identify the chemical structure of those defects that have a direct impact on the device performance at the operating temperature. The results obtained via electrical characterization (DLTS&TSC) can be connected with structural and chemical investigations (HRTEM & EPR) only by following the annealing behaviour of the defects. DLTS&TSC results regarding annealing at high temperatures will be presented and discussed. Preliminary HRTEM and EPR results obtained on samples (some enriched with O and C isotopes) irradiated with electrons of energies 15MeV and 27 MeV will be also presented.Speaker: Dr Ioana Pintilie (NIMP Bucharest-Magurele, Romania)
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09:20
Charge collection and laser measurements on double-sided 3D strip sensors irradiated up to 2*10^16 n_eq/cm^2 20mAlthough 3D silicon sensors are characterized by higher capacitance (thus higher noise), lower spatial uniformity and more fabrication process complexity than standard sensors, the higher radiation hardness motivates the investigation of this layout in view of the LHC upgrade. In between the different 3D layouts, the double-sided represent the most attractive but also the most mechanically challenging. We performed charge collection (with a beta source) and laser studies on irradiated (up to 2*10^16 n_eq/cm^2), p-type, 3D double-sided strip sensors from the ATLAS Insertable B-Layer (IBL) production wafers, fabricated at FBK (Trento). We compared the results with the one obtained before irradiation and with simulations performed with TCAD. While the charge collection reflect the expectation from simulation and show the relatively high radiation hardness, being significant also at relatively low bias voltages (e.g. at 25 V for 5*10^15 n_eq/cm^2), laser measurements shows that the most effective regions are located and grows with the bias voltage dependently on the irradiation fluence (showing unexpected high collection close to the p+ columns).Speaker: Riccardo Mori (Albert-Ludwigs-Universitaet Freiburg (DE))
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09:40
Characterization of CNM's 3D pixel sensors for the phase-2 upgrade of the CMS vertex detector 20mThe Large Hadron Collider (LHC) is developing a very successfully work in the last two years, and it will suffer an important accelerator upgrade by 2020, the High Luminosity-LHC (HL-LHC). These improvements will increase by a factor ten the instantaneous luminosity as well as the particle luxes at the detectors, such as the Compact Muon Solenoid (CMS) experiment.The inner tracker detector will be the most affected part, increasing substantially its occupancy and radiation damage. In order to conserve the sensors performance under this new conditions, the CMS pixel detector will be upgraded. The new requirements demand the use of new silicon technologies instead of actual pixel planar sensors. Planar sensors have not shown enough radiation hardness for the innermost layers where the radiation doses can reach values around 2x10¹⁶ neq/cm² . 3D sensors technologies are one of the candidates to be used in the closest layers to the beam pipe. They show higher radiation hardness at lower operating voltages, and the double sided design provide some additional technical advantages. Several wafers have been produced at the IMB-CNM (Barcelona, Spain), implementing two different pitches between p-electrodes. First characterizations have been carried out at IMB-CNM and PSI (Villigen, Switzerland). Results after electrical characterization and radioactive source test (90 Sr), before and after irradiation will be presented, as well as the first results after a test beam at DESY facilities.Speaker: Ms Francisca J. Muñoz Sánchez (IFCA)
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10:00
Beam test results of 3D pixel devices for forward tracking 20mTracking detectors for forward phycics experiments impose two critical requirements: first, the active area of the detector has to be as close as possible to the beam, which means that the dead region of the sensor has to be minimized. Second, the device has to be able to cope with an inhomogeneous radiation distribution. In this presentation results of beam tests of slim-edged 3D pixel devices and of in-homogeneously irradiated devices carried out at DESY in June and July 2013 will be presented.Speaker: Joern Lange (IFAE Barcelona)
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10:20
Coffee Break 30m
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10:50
Status of Scribe-Cleave-Passivate (SCP) Slim Edge Technology 20mWe are pursuing a “slim edge” technology which allows a drastic reduction of inactive region along the perimeter of silicon detectors. Such reduction would benefit construction of large-area tracker and imaging systems. Key components of this method are surface scribing, cleaving, and passivation of the resulting sidewall. We will give a short overview of the project and describe recent progress on the manufacturing technology and device studies. The latter includes charge collection near the edge and irradiation studies.Speaker: Vitaliy Fadeyev (University of California,Santa Cruz (US))
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11:10
Irradiated n-in-p planar pixel sensors of different thicknesses and active edge designs 20mWe present results of the characterization of n-in-p planar pixel modules employing 100 and 200 µm thin sensors with active edges produced at VTT, Finland, and 150 µm thin sensors produced at MPP/HLL. These are interconnected with bump bonding to either FE-I3 or FE-I4 ATLAS read-out chips and irradiated up to a fluence of 1e16. A comparison of the performance of the different sensor thicknesses and studies of the edge properties for the VTT sensors have been performed with radioactive sources in the laboratory and using precise beam test measurements with 120 GeV pions at CERN SpS and 4 GeV electrons at DESY, Hamburg.Speaker: Stefano Terzo (Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut) (D)
- 11:30
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11:40
Future sensor-chip packaging technologies at CiS 20mIn the past, the CiS research institute has made a mark as a vendor of reliable radiation hard planar silicon sensors for various important HEP detectors. In addition to the sensor production, it is aiming for an extension of the possibilities of in-house sensor-chip packaging. Initial tests of a combination of electroless nickel UBM and solder ball bumping have been started. This batch-wise process presents a cost-efficient method for large-area silicon applications. Further approaches include light induced or MoSi-based electroplating. The investigations of radiation hardness and minimization of the bump pad dimensions as requested for future pixel designs are as well an important objective which is pursued.Speaker: Tobias Wittig (Technische Universitaet Dortmund (DE))
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12:00
Active pixel sensors in 180 nm HV CMOS technology for HL-LHC detector upgrades 20mRecently, certain CMOS processes featuring the option to apply significant bias voltages have shown the potential for producing drift-based radiation-hard tracking detectors. We explore the concept of using a deep-submicron HV CMOS process to produce a drop-in replacement for traditional radiation-hard silicon sensors. Such active sensors contain simple circuits, e.g. amplifiers and discriminators, but still require a traditional (pixel or strip) readout chip. This approach yields most advantages of MAPS (improved resolution, reduced cost and material budget, etc.), without the complication of full integration on a single chip. After outlining the basic design of the HV2FEI4 test ASIC, results after irradiation with protons, x-rays and neutrons up to 1e16 neq/cm2 or 100MRad will be presented. Design changes towards the optimised HV2FEI4_v2 are discussed and results after irradiation up to 862 MRad are shown before elaborating on future plans and general prospects of active sensors. Finally, an overview is given on similar approaches aiming for fully monolithic rad-hard pixel and strip detectors.Speaker: Daniel Muenstermann (Universite de Geneve (CH))
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12:20
Preliminary irradiation studies of ultra thin 3D detectors 20mWe will show the first results of 3D ultra thin silicon detectors irradiated with neutrons at 10E16cm-2 1MeV eq. The detectors were tested at room and low temperature with alpha particles.Speakers: Giulio Pellegrini (Universidad de Valencia (ES)), Dr Virginia Greco (CNM-IMB-CSIC)
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12:40
Discussion Session on New structures (3D, slim and active edges, ...) 30mSpeakers: Giulio Pellegrini (Universidad de Valencia (ES)), Giulio Pellegrini (Universidad de Valencia (ES))
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09:00
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