|
12:25
|
Device Simulations and some key experimental data
-
Vladimir Eremin
(Ioffe Physical Technical Institute of Russian Academy of Scienc)
(until 19:10)
()
|
|
12:25
|
--- Lunch Break ---
|
|
13:35
|
TCAD for Radiation, a review
- Dr
Fco. Rogelio Palomo Pinto
(School of Engineering University of Sevilla)
()
|
|
13:55
|
A Single Event Effects tool for VLSI designers
- Dr
Fco. Rogelio Palomo Pinto
(School of Engineering University of Sevilla)
()
|
|
14:15
|
Experimental study of the Si-SO2 interface region in p+n-silicon strip sensors before and after X-ray irradiation
-
Thomas Poehlsen
(University of Hamburg)
()
|
|
14:35
|
Simulations of Hadron Irradiated n+p- Si Strip Sensors Incorporating Bulk and Surface Damage
-
Ranjeet Ranjeet
(University of Delhi (IN))
()
|
|
14:55
|
Non-uniform 3-level defect model and status of edge-TCT simulations
-
Timo Hannu Tapani Peltola
(Helsinki Institute of Physics (FI))
()
|
|
15:15
|
--- Coffee Break ---
|
|
15:45
|
Contribution from Eg(T) dependence into parameterization of the bulk generation current of irradiated Si detectors
- Dr
Vladimir Eremin
(Ioffe Physical-Technical Institute of Russian Academy of Sciences, St. Petersburg, Russia)
()
|
|
16:05
|
Update on the temperature dependence of the bulk current in Si (remote)
-
Alexandre Chilingarov
(Lancaster University (GB))
()
|
|
16:25
|
Trapping related negative feedback as the reason for collected charge restriction in heavily irradiated Si detectors operating with avalanche multiplication
- Dr
Elena Verbitskaya
(Ioffe Physical-Technical Institute of Russian Academy of Sciences, St. Petersburg, Russia)
()
|
|
16:45
|
Comparison of Radiation Hardness Properties of p+n- & n+p- Si Strip Sensors Using Simulation Approach
-
Ranjeet Ranjeet
(University of Delhi (IN))
()
|
|
17:05
|
TCAD simulations and beam tests: measuring the electric field in irradiates sensors
-
Marco Bomben
(Centre National de la Recherche Scientifique (FR))
()
|
|
17:25
|
T-CAD simulation of Lorentz angle
-
Andreas Matthias Nurnberg
(KIT - Karlsruhe Institute of Technology (DE))
()
|
|
17:45
|
Discussion on Simulations
-
Vladimir Eremin
(Ioffe Physical Technical Institute of Russian Academy of Scienc)
()
|
|
19:30
|
Dinner
(until 23:30)
()
|
