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23rd RD50 Workshop (CERN)

13–15 Nov 2013

CERN

Europe/Zurich timezone

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Speaker List

Marta Baselga (CNM (Barcelona))
- Speaker at First results of new p-type strip and pad detectors with LGAD in epitaxial wafers (remote, afternoon)
Christopher Betancourt (Freiburg University)
- Speaker at Charge Collection Measurements on Dedicated RD50 Charge Multiplication SSDs
Marco Bomben (Centre National de la Recherche Scientifique (FR))
- Speaker at TCAD simulations and beam tests: measuring the electric field in irradiates sensors
Nicolo Cartiglia (INFN)
- Speaker at A parametrization of the performance of Ultra-Fast Silicon detector
Gianluigi Casse (University of Liverpool (GB))
- Speaker at Planar Pixel Detectors for the ATLAS Pixel Detector upgrade
Alexandre Chilingarov (Lancaster University (GB))
- Speaker at Update on the temperature dependence of the bulk current in Si (remote)
Vladimir Eremin (Ioffe Physical-Technical Institute of Russian Academy of Sciences, St. Petersburg, Russia)
- Speaker at Discussion on Simulations
- Speaker at Contribution from Eg(T) dependence into parameterization of the bulk generation current of irradiated Si detectors
Vitaliy Fadeyev (University of California,Santa Cruz (US))
- Speaker at Silicon Sensors Irradiation Study for ILC Extreme Forward Calorimetry
- Speaker at Status of Scribe-Cleave-Passivate (SCP) Slim Edge Technology
Marcos Fernandez Garcia (Universidad de Cantabria (ES))
- Speaker at Thermal characterization of Low Gain Avalanche Detectors (before 4pm)
Eckhart Fretwurst (II. Institut fuer Experimentalphysik)
- Speaker at Discussion on Defect and Sensor Characterization
Virginia Greco (CNM-IMB-CSIC)
- Speaker at Preliminary irradiation studies of ultra thin 3D detectors
Gregor Kramberger (Jozef Stefan Institute (SI))
- Speaker at Discussion Session - Full Detector Systems
- Speaker at Particulas Demonstration of a Commercial TCT system
- Speaker at Initial acceptor removal in p-type silicon detectors
- Speaker at Studies of LGAD diodes in Ljubljana (an update)
Joern Lange (IFAE Barcelona)
- Speaker at Beam test results of 3D pixel devices for forward tracking
Anna Macchiolo (Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut) (D)
- Speaker at Proposal for a production of thin active edge diodes and pixels
Marcela Mikestikova (Acad. of Sciences of the Czech Rep. (CZ))
- Speaker at ATLAS12A Endcap Mini Sensors Electrical Testing
Michael Moll (CERN)
- Speaker at Workshop Opening
Riccardo Mori (Albert-Ludwigs-Universitaet Freiburg (DE))
- Speaker at Charge collection and laser measurements on double-sided 3D strip sensors irradiated up to 2*10^16 n_eq/cm^2
Daniel Muenstermann (Universite de Geneve (CH))
- Speaker at Active pixel sensors in 180 nm HV CMOS technology for HL-LHC detector upgrades
Francisca J. Muñoz Sánchez (IFCA)
- Speaker at Characterization of CNM's 3D pixel sensors for the phase-2 upgrade of the CMS vertex detector
Hannes Neugebauer (Hamburg University (DE))
- Speaker at Systematic investigation of p-irradiated Micron pad detectors of different silicon materials
Andreas Matthias Nurnberg (KIT - Karlsruhe Institute of Technology (DE))
- Speaker at Investigation of non gaussian noise in irradiated p-on-n sensors
- Speaker at T-CAD simulation of Lorentz angle
Fco. Rogelio Palomo Pinto (School of Engineering University of Sevilla)
- Speaker at TCAD for Radiation, a review
- Speaker at A Single Event Effects tool for VLSI designers
Giulio Pellegrini (Universidad de Valencia (ES))
- Speaker at Discussion Session on New structures (3D, slim and active edges, ...)
- Speaker at Preliminary irradiation studies of ultra thin 3D detectors
- Speaker at Discussion on LGAD and other detectors with Avalanche
Giulio Pellegrini (Universidad de Valencia (ES))
- Speaker at Discussion Session on New structures (3D, slim and active edges, ...)
Timo Hannu Tapani Peltola (Helsinki Institute of Physics (FI))
- Speaker at Non-uniform 3-level defect model and status of edge-TCT simulations
Ioana Pintilie (NIMP Bucharest-Magurele, Romania)
- Speaker at Update on irradiation experiments with electrons of different kinetic energies (between 1.5 MeV and 27 MeV) performed on n-type silicon [Not on Wednesday]
Thomas Poehlsen (University of Hamburg)
- Speaker at Experimental study of the Si-SO2 interface region in p+n-silicon strip sensors before and after X-ray irradiation
Ranjeet Ranjeet (University of Delhi (IN))
- Speaker at Comparison of Radiation Hardness Properties of p+n- & n+p- Si Strip Sensors Using Simulation Approach
- Speaker at Simulations of Hadron Irradiated n+p- Si Strip Sensors Incorporating Bulk and Surface Damage
Hartmut Sadrozinski (SCIPP, UC santa Cruz)
- Speaker at Electrical and alpha TCT measurements on LGAD produced by CNM (not on Wed. morning)
Georg Steinbrueck (Hamburg University (DE))
- Speaker at Radiation hard silicon sensors for the CMS tracker upgrade (Not Wednesday early morning)
Stefano Terzo (Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut) (D)
- Speaker at Irradiated n-in-p planar pixel sensors of different thicknesses and active edge designs
Miguel Ullan Comes (Universidad de Valencia (ES))
- Speaker at Status of the Low Resistance Strip Sensors Project
Juozas Vaitkus (Vilnius University)
- Speaker at PECULIARITIES OF DARK CONDUCTIVITY IN IRRADIATED SILICON (not Friday)
- Speaker at Preliminary results on measurements of surface recombination velocity on SLIM edges passivated Si (not Friday)
Elena Verbitskaya (Ioffe Physical-Technical Institute of Russian Academy of Sciences, St. Petersburg, Russia)
- Speaker at Trapping related negative feedback as the reason for collected charge restriction in heavily irradiated Si detectors operating with avalanche multiplication
Tobias Wittig (Technische Universitaet Dortmund (DE))
- Speaker at Future sensor-chip packaging technologies at CiS
Sven Wonsak (University of Liverpool (GB))
- Speaker at Status of Silicon Strip Sensor Measurements at Liverpool