3rd Workshop on Advanced Silicon Radiation Detectors (3D and P-type Technologies)

Liverpool charge collection results on RD50 p-type sensor sets

14 Apr 2008, 16:30

30m

Residencia CSIC-Generalitat de Catalunya, Barcelona, Spain

Radiation hardness properties of p-type substrate silicon micro-strip detectors: neutron and proton irradiations P-type strip detectors 3

Speaker

Dr Anthony Affolder (University of Liverpool)

Description

Charge collection measurements from Liverpool on RD50 p-type sensors sets irradiated up to 1x10^16 neq/cm^2 with neutrons and protons will be presented. A comparison of the charge collection and bias current performances of thin (140 um) and thick (~300 um) p-type sensor will be shown.

Presentation materials

Slides

affolder-Liv-ptype.pdf

affolder-Liv-ptype.ppt