Prof.
Emilio Lora-Tamayo
(Director of CNM Fabrication Facility)
4/14/08, 11:30 AM
Radiation hardness properties of p-type substrate silicon micro-strip detectors: neutron and proton irradiations
Dr
Gianluigi Casse
(University of Liverpool)
4/14/08, 12:00 PM
Radiation hardness properties of p-type substrate silicon micro-strip detectors: neutron and proton irradiations
Sadrozinski Hartmut
(SCIPP, UC santa Cruz)
4/14/08, 12:30 PM
Requirements for the experiments and perspective use of planar and 3D technologies at various radii
Data on charge collection on p-type sensors irradiated with prootons, pions and neutrons will be presented.
Yoshinobu Unno
(KEK)
4/14/08, 2:30 PM
Radiation hardness properties of p-type substrate silicon micro-strip detectors: neutron and proton irradiations
We have fabricated silicon microstrip sensors in 150 mm p-type wafers and carried out irradiation of protons of 70 MeV up to 2x10^15 1-MeV neutron equivalent/cm^2. Full depletion votages along the fluence of the protons of 70 MeV have shown quite different development than those in 100 mm p-type wafers. The sensors are made of different isolation structures in the n-strip side....
Gregor Kramberger
(Jozef Stefan Institute)
4/14/08, 3:00 PM
Radiation hardness properties of p-type substrate silicon micro-strip detectors: neutron and proton irradiations
A large set of diodes processed by Micron on MCz and FZ n and p type materials was investigated up to equivalent fluences of 3e15 cm-2. Charge collection measurements were performed in addition to C-V. The charge collection efficiency was found to be better than expected from simulations and good agreement was found between full depletion voltages determined from charge collection and CV measurements.
Vladimir Cindro
(Jozef Stefan Institute)
4/14/08, 3:30 PM
Radiation hardness properties of p-type substrate silicon micro-strip detectors: neutron and proton irradiations
Radiation effects in standard FZ, DOFZ and MCZ Si diodes were evaluated with C/V, I/V and TCT measurements. FDV, I and trapping times were measured. Diodes were irradiated with protons and neutrons with fluences up to 3*10**14. Measurements after combined proton/neutron irradiation will be also shown.
Dr
Anthony Affolder
(University of Liverpool)
4/14/08, 4:30 PM
Radiation hardness properties of p-type substrate silicon micro-strip detectors: neutron and proton irradiations
Charge collection measurements from Liverpool on RD50 p-type sensors sets irradiated up to 1x10^16 neq/cm^2 with neutrons and protons will be presented. A comparison of the charge collection and bias current performances of thin (140 um) and thick (~300 um) p-type sensor will be shown.
Mercedes Minano Moya
(Instituto de Fisica Corpuscular (IFIC) UV-CSIC)
4/14/08, 5:00 PM
Radiation hardness properties of p-type substrate silicon micro-strip detectors: neutron and proton irradiations
Silicon p-type detectors are being investigated for the development of radiation tolerant detectors for the luminosity upgrade of the CERN large hadron collider (super-LHC). Microstrip detectors have been fabricated by CNM-IMB with a n-side read-out on p-type high resistivity float zone substrates. They have been irradiated with neutrons at the TRIGA Mark II nuclear reactor in Ljubljana. The...
Igor Mandic
(Jožef Stefan Institute)
4/14/08, 5:30 PM
Radiation hardness properties of p-type substrate silicon micro-strip detectors: neutron and proton irradiations
A setup for measurements with SCT128 chip was built in Ljubljana. First results of charge collection measurements with this setup will be presented. Measurements were made with miniature p-type microstrip sensors with n-side readout from Micron. Sensors were irradiated with neutrons up to 1 MeV equivalent fluence of 3e15 n/cm2.
Panja-Riina Luukka
(Helsinki Institute of Physics HIP)
4/14/08, 6:00 PM
We constructed in 2007 a beam telescope based on the CMS Tracker data acquisition prototype cards and the APV25 readout chips. The telescope has up to 8 silicon strip reference detectors and slots for couple of modules under test. The APV25 chip has a fully analog architecture, and it can be used for testing both p- and n-type detectors. The impact point precision of the reference tracks is 4...
Donato Creanza
(Dipartimento Interateneo di Fisica-Universita degli Studi di Bar)
4/15/08, 9:30 AM
Radiation hardness properties of p-type substrate silicon micro-strip detectors: neutron and proton irradiations
Several MCz diodes from the SMART production, of both n- and p- type, have been irradiated on the 24 GeV/c proton beam at CERN up to a fluence of 1.59 10^15 neq. In the framework of a common RD50 research program, electrical characterization and TCT studies have been performed as a function of the annealing time. All irradiated samples show a clear double junction effect. Both annealing and...
Michael Beimforde
(Werner-Heisenberg-Institut - Max-Planck-Institut fuer Physik)
4/15/08, 10:00 AM
Radiation hardness properties of p-type substrate silicon micro-strip detectors: neutron and proton irradiations
The electrical isolation between the ATLAS pixels plays an important role for the electric fields in the pixel sensors and has an influence on the spatial resolution.
The simulation programs Dios and TeSCA are used to simulate n-in-n and n-in-p sensors with different geometries and isolation parameters before and after irradiation to study their effects on the operating conditions.
Dr
Sherwood Parker
(University of Hawaii)
4/15/08, 2:30 PM
Radiation hardness properties of 3D detectors (results and simulations)
Dr
Cinzia Da Via
(University of Manchester)
4/15/08, 3:30 PM
Radiation hardness properties of 3D detectors (results and simulations)
Giulio Pellegrini
(CNM-IMB)
4/15/08, 4:30 PM
Radiation hardness properties of 3D detectors (results and simulations)
I will report on the last results of 3D detector fabrication.
Dr
Richard Bates
(University of Glasgow)
4/15/08, 5:00 PM
Radiation hardness properties of 3D detectors (results and simulations)
Double sided 3D n-type bulk detectors processed at CNM, Barcelona, have been characterised electrical and as charge collection devices at Glasgow. The detectors are readout via the p-type columns from the front of the device, while the n-type columns, which exit via the back of the device, are all shorted together. The IV and CV characteristics of the devise are presented before and after...
Dr
Zheng Li
(BNL)
4/15/08, 5:30 PM
Radiation hardness properties of 3D detectors (results and simulations)
Calculations of 3D weighting field profiles have been performed 3 types of 3D detectors: single-type column, two-type columns, and double-sided two-type columns. It has been shown that for pitches less or equal to 50 um, the weighting field distributes throughout the detector, with half of the maximum strength in the middle of the cell (between the 4 electrodes/columns). The main limiting...
Prof.
Stephen Watts
(University of Manchester)
4/15/08, 6:00 PM
Formulae that describe the fluence and geometry dependence of the charge collection efficiency in 3D and planar detectors will be described and compared with data.
Dr
Richard Bates
(University of Glasgow)
4/16/08, 9:30 AM
Radiation hardness properties of 3D detectors (results and simulations)
The different process stages required to fabricate a 3D detector is described. As a consequence of this a non-standard silicon detector manufacture was identified as a potential vendor. A detailed description of the process flow is presented followed by a discussion of process optimization. The first results of devices from the company are shown and lessons learnt expanded upon. From these...
Dr
Angela Kok
(SINTEF)
4/16/08, 10:00 AM
Radiation hardness properties of 3D detectors (results and simulations)
3D detectors, with vertical electrodes penetrating through the entire silicon substrate have drawn high interests for future particle tracking and medical imaging applications due to their unique advantages such as ultra-fast time response, edgeless capability, low initial depletion voltage and radiation hardness. In addition, the through-wafer electrode technology can provide the possibility...
Maurizio Boscardin
(Fondazione Bruno Kessler)
4/16/08, 10:30 AM
Radiation hardness properties of 3D detectors (results and simulations)
The status of 3D detector development at FBK-irst will be reviewed.
In particular, we will present the fabrication process of the double-sided, double-type 3D detectors (3D-DDTC) along with selected results from the experimental characterization of detectors and test structures from the first 3D-DDTC batch made on n-substrates.
Andrea Zoboli
(Universita' di Trento e INFN)
4/16/08, 10:45 AM
Radiation hardness properties of 3D detectors (results and simulations)
Daniel Muenstermann
(TU Dortmund)
4/16/08, 11:30 AM
Radiation hardness properties of 3D detectors (results and simulations)
To cope with the increased luminosity of SLHC, the complete inner tracker of ATLAS must be upgraded. The talk aims to give an overview of current pixel detector activities with emphasis on R&D activities outside of 3D- and p-type-sensors. Apart from sensors, also FE developments and challenges for powering and cooling will be briefly described.
Yoshinobu Unno
(KEK)
4/16/08, 12:00 PM
Radiation hardness properties of p-type substrate silicon micro-strip detectors: neutron and proton irradiations
In order to utilize the SOI wafer such that the CMOS electronics is processed in the silicon layer (SOI) over the SiO2 insulator layer and the active sensor layer in the handle wafer below the insulator layer, a monolithic silicon detector without bump bondings. We have been developing pixel detectors in collaboration with industry to utilize its advanced technology on 0.15 µm and 0.20 µm...
Hans-Günther Moser
(Max-Planck-Institut)
4/16/08, 12:30 PM
Report on new techniques for interconnectivty (3D-connectivity)
3D interconnection technologiy opens new possibilties for advanced pixel detectors. These include material reduction, lower pitch, more functionality per pixel, 4-side buttable layouts and multi-layer ASICs with optimized technologies.
An overview on the technology and current or planned projects will be given.
