14–16 Apr 2008
Residencia CSIC-Generalitat de Catalunya, Barcelona, Spain
Europe/Zurich timezone

Development of silicon microstrip sensors in 150 mm p-type wafers

14 Apr 2008, 14:30
30m
Residencia CSIC-Generalitat de Catalunya, Barcelona, Spain

Residencia CSIC-Generalitat de Catalunya, Barcelona, Spain

Residencia de Investigadores del CSIC-Generalitat de Catalunya Carrer Hospital, 64. E08001, Barcelona, Spain
Radiation hardness properties of p-type substrate silicon micro-strip detectors: neutron and proton irradiations P-type strip detectors 2

Speaker

Yoshinobu Unno (KEK)

Description

We have fabricated silicon microstrip sensors in 150 mm p-type wafers and carried out irradiation of protons of 70 MeV up to 2x10^15 1-MeV neutron equivalent/cm^2. Full depletion votages along the fluence of the protons of 70 MeV have shown quite different development than those in 100 mm p-type wafers. The sensors are made of different isolation structures in the n-strip side. Characterization of the isolation structures are also made for the onset voltages of microdischarge, isolation of the n-strips, etc.

Primary author

Presentation materials