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3rd Workshop on Advanced Silicon Radiation Detectors (3D and P-type Technologies)

Europe/Zurich
Residencia CSIC-Generalitat de Catalunya, Barcelona, Spain

Residencia CSIC-Generalitat de Catalunya, Barcelona, Spain

Residencia de Investigadores del CSIC-Generalitat de Catalunya Carrer Hospital, 64. E08001, Barcelona, Spain
Gianluigi Casse (Department of Physics. University of Liverpool. UK), Giulio Pellegrini (CNM Instituto de Microelectronica de Barcelona), Manuel Lozano (CNM Instituto de Microelectronica de Barcelona)
Description
The meeting aims to provide an overview of the results obtained with p-type and 3D sensors and to consider these results in the light of the most demanding requirements at future detectors (both pixels and micro-strips). The organisers think it is important that colleagues from the 3D, pixel (planar and 3D) and microstrip communities meet to present state of the art developments in sensors and connectivity and have time to discuss these. This need emerged, for example, during the last 2007 ATLAS upgrade workshop in Valencia, where the density of the programme limited the time available for discussion. </cr></cr>As part of the Barcelona meeting, it is our intention to present to potential users a 40MHz read-out data acquisition system based around the Beetle analogue chip, the ALIBAVA system
Participants
  • Abdenour Lounis
  • Andrea Zoboli
  • Angela Kok
  • Anna Macchiolo
  • Anthony Affolder
  • Calderini Giovanni
  • Carmen Garcia
  • Celeste Fleta
  • Cinzia Da Via
  • Claus Goessling
  • Consuelo Guardiola
  • Cristobal Padilla Aranda
  • Daniel Muenstermann
  • Daniela Bassignana
  • Donato Creanza
  • Gian-Franco Dalla Betta
  • Gianluigi Casse
  • Giulio Pellegrini
  • Gregor Kramberger
  • Hans-Günther Moser
  • Igor Mandic
  • Ilya Korolkov
  • Ivan Vila Alvarez
  • Jaakko Haerkoenen
  • Juan Pablo Balbuena Valenzuela
  • lytovchenko oleksiy
  • Manuel Lozano
  • Maria Elena Martin Albarran
  • Mathieu Benoit
  • Matteo Cavalli-Sforza
  • Maurizio Boscardin
  • Mercedes Minano Moya
  • Michael Beimforde
  • Miguel Ullán
  • Monica Scaringella
  • Norman Manna
  • Panja-Riina Luukka
  • Peter Kodys
  • Ricardo Marco
  • Richard Bates
  • Richard Jaramillo
  • Sadrozinski Hartmut
  • Sally Seidel
  • Sherwood Parker
  • Stephen Watts
  • Ulrich Parzefall
  • Vaclav Vrba
  • Vladimir Cindro
  • Yoshinobu Unno
  • Zheng Li
    • 10:00 11:00
      Registration 1h
    • 11:00 11:30
      Coffee break 30m
    • 11:30 13:00
      P-type strip detectors 1

      P-type strip detectors

      • 11:30
        Welcome to CNM and presentation of new CNM Clean Room 30m
        Speaker: Prof. Emilio Lora-Tamayo (Director of CNM Fabrication Facility)
        Slides
      • 12:00
        Overview of p-type detectors 30m
        Speaker: Dr Gianluigi Casse (University of Liverpool)
        Slides
      • 12:30
        Charge collection in p-type sensors 30m
        Data on charge collection on p-type sensors irradiated with prootons, pions and neutrons will be presented.
        Speaker: Sadrozinski Hartmut (SCIPP, UC santa Cruz)
        Slides
    • 13:00 14:30
      Lunch 1h 30m
    • 14:30 16:00
      P-type strip detectors 2
      • 14:30
        Development of silicon microstrip sensors in 150 mm p-type wafers 30m
        We have fabricated silicon microstrip sensors in 150 mm p-type wafers and carried out irradiation of protons of 70 MeV up to 2x10^15 1-MeV neutron equivalent/cm^2. Full depletion votages along the fluence of the protons of 70 MeV have shown quite different development than those in 100 mm p-type wafers. The sensors are made of different isolation structures in the n-strip side. Characterization of the isolation structures are also made for the onset voltages of microdischarge, isolation of the n-strips, etc.
        Speaker: Yoshinobu Unno (KEK)
        Slides
      • 15:00
        Systematic measurements of p and n type diodes irradiated with protons, pions and neutrons 30m
        A large set of diodes processed by Micron on MCz and FZ n and p type materials was investigated up to equivalent fluences of 3e15 cm-2. Charge collection measurements were performed in addition to C-V. The charge collection efficiency was found to be better than expected from simulations and good agreement was found between full depletion voltages determined from charge collection and CV measurements.
        Speaker: Gregor Kramberger (Jozef Stefan Institute)
        Slides
      • 15:30
        Radiation effects in p-type silicon diodes irradiated with protons and neutrons 30m
        Radiation effects in standard FZ, DOFZ and MCZ Si diodes were evaluated with C/V, I/V and TCT measurements. FDV, I and trapping times were measured. Diodes were irradiated with protons and neutrons with fluences up to 3*10**14. Measurements after combined proton/neutron irradiation will be also shown.
        Speaker: Vladimir Cindro (Jozef Stefan Institute)
        Slides
    • 16:00 16:30
      Coffee break 30m
    • 16:30 18:30
      P-type strip detectors 3
      • 16:30
        Liverpool charge collection results on RD50 p-type sensor sets 30m
        Charge collection measurements from Liverpool on RD50 p-type sensors sets irradiated up to 1x10^16 neq/cm^2 with neutrons and protons will be presented. A comparison of the charge collection and bias current performances of thin (140 um) and thick (~300 um) p-type sensor will be shown.
        Speaker: Dr Anthony Affolder (University of Liverpool)
        Slides
      • 17:00
        Characterization of P-type Silicon Detectors Irradiated with Neutrons 30m
        Silicon p-type detectors are being investigated for the development of radiation tolerant detectors for the luminosity upgrade of the CERN large hadron collider (super-LHC). Microstrip detectors have been fabricated by CNM-IMB with a n-side read-out on p-type high resistivity float zone substrates. They have been irradiated with neutrons at the TRIGA Mark II nuclear reactor in Ljubljana. The irradiation fluxes match with the expected doses for the inner tracker at the sLHC (up to 8E015 equivalent 1MeV neutrons cm-2). DOFZ and MCz silicon substrate technologies are evaluated. The macroscopic properties of the irradiated prototypes after irradiation were characterized at the IFIC-Valencia laboratory. The charge collection studies were carried out by means of a radioactive source setup as well as by an infrared laser illumination.
        Speaker: Mercedes Minano Moya (Instituto de Fisica Corpuscular (IFIC) UV-CSIC)
        Slides
      • 17:30
        Measurement of charge collection in p-type microstrip sensors with SCT128 chip 30m
        A setup for measurements with SCT128 chip was built in Ljubljana. First results of charge collection measurements with this setup will be presented. Measurements were made with miniature p-type microstrip sensors with n-side readout from Micron. Sensors were irradiated with neutrons up to 1 MeV equivalent fluence of 3e15 n/cm2.
        Speaker: Igor Mandic (Jožef Stefan Institute)
        Slides
      • 18:00
        Beam telescope for testing p- and n-type detectors 30m
        We constructed in 2007 a beam telescope based on the CMS Tracker data acquisition prototype cards and the APV25 readout chips. The telescope has up to 8 silicon strip reference detectors and slots for couple of modules under test. The APV25 chip has a fully analog architecture, and it can be used for testing both p- and n-type detectors. The impact point precision of the reference tracks is 4 um, and the S/N of the telescope is 25. The telescope and the detectors under test are housed inside a cold chamber, which allows testing of highly irradiated sensors.
        Speaker: Panja-Riina Luukka (Helsinki Institute of Physics HIP)
        Slides
    • 09:30 11:00
      P-type strip detectors 4
      • 09:30
        On MCz SCSI after 24 GeV/c proton irradiation 30m
        Several MCz diodes from the SMART production, of both n- and p- type, have been irradiated on the 24 GeV/c proton beam at CERN up to a fluence of 1.59 10^15 neq. In the framework of a common RD50 research program, electrical characterization and TCT studies have been performed as a function of the annealing time. All irradiated samples show a clear double junction effect. Both annealing and TCT studies seem to indicate the occurrence of type inversion of p-type MCz diodes at high fluences.
        Speaker: Donato Creanza (Dipartimento Interateneo di Fisica-Universita degli Studi di Bar)
        Slides
      • 10:00
        Simulation of moderated p-spray isolations with DIOS and TeSCA 30m
        The electrical isolation between the ATLAS pixels plays an important role for the electric fields in the pixel sensors and has an influence on the spatial resolution. The simulation programs Dios and TeSCA are used to simulate n-in-n and n-in-p sensors with different geometries and isolation parameters before and after irradiation to study their effects on the operating conditions.
        Speaker: Michael Beimforde (Werner-Heisenberg-Institut - Max-Planck-Institut fuer Physik)
        Slides
    • 11:00 11:30
      Coffee break 30m
    • 11:30 13:00
      Alibava

      Presentation of Alibava Readout System

      Minutes
    • 13:00 14:30
      Lunch 1h 30m
    • 14:30 16:00
      3D Detectors 1
      • 14:30
        Overview of 3D detectors 1h
        Speaker: Dr Sherwood Parker (University of Hawaii)
      • 15:30
        Last results on 3D detectors 30m
        Speaker: Dr Cinzia Da Via (University of Manchester)
        Slides
    • 16:00 16:30
      Coffee break 30m
    • 16:30 19:00
      3D Detectors 2
      • 16:30
        Report from CNM activities on 3D detectors 30m
        I will report on the last results of 3D detector fabrication.
        Speaker: Giulio Pellegrini (CNM-IMB)
        Slides
      • 17:00
        CNM double-sided 3D strip detectors before and after neutron irradiation 30m
        Double sided 3D n-type bulk detectors processed at CNM, Barcelona, have been characterised electrical and as charge collection devices at Glasgow. The detectors are readout via the p-type columns from the front of the device, while the n-type columns, which exit via the back of the device, are all shorted together. The IV and CV characteristics of the devise are presented before and after reactor neutron irradiation to a fluence of 5 x 1015 1MeV equivalent neutrons cm-2. The charge collection, from a Sr-90 MIP source, of a strip detector formed from 50 columns per strip at a pitch of 80um is presented both before and after the same neutron irradiation.
        Speaker: Dr Richard Bates (University of Glasgow)
        Slides
      • 17:30
        Calculations of 3D Weighting Field Profiles for 3D Detectors 30m
        Calculations of 3D weighting field profiles have been performed 3 types of 3D detectors: single-type column, two-type columns, and double-sided two-type columns. It has been shown that for pitches less or equal to 50 um, the weighting field distributes throughout the detector, with half of the maximum strength in the middle of the cell (between the 4 electrodes/columns). The main limiting factor for CCE seems to be the electric field instead.
        Speaker: Dr Zheng Li (BNL)
        Slides
      • 18:00
        Modelling and comparison with data of CCE in 3D and planar detectors 30m
        Formulae that describe the fluence and geometry dependence of the charge collection efficiency in 3D and planar detectors will be described and compared with data.
        Speaker: Prof. Stephen Watts (University of Manchester)
        Slides
    • 21:00 23:00
      Conference Dinner 2h Restaurant Posit

      Restaurant Posit

      Calle Ramón Trias Fargas, 2 - Platja de la Barceloneta - 08005 BARCELONA.

      Restaurant Posit

    • 09:30 11:20
      3D detectors 3
      • 09:30
        Experience with an industrial vendor in the manufacture of 3D detectors 30m
        The different process stages required to fabricate a 3D detector is described. As a consequence of this a non-standard silicon detector manufacture was identified as a potential vendor. A detailed description of the process flow is presented followed by a discussion of process optimization. The first results of devices from the company are shown and lessons learnt expanded upon. From these results a new process flow has been developed which is shown.
        Speaker: Dr Richard Bates (University of Glasgow)
        Slides
      • 10:00
        First Results from 3D Detector Prototypes at SINTEF MiNaLab 30m
        3D detectors, with vertical electrodes penetrating through the entire silicon substrate have drawn high interests for future particle tracking and medical imaging applications due to their unique advantages such as ultra-fast time response, edgeless capability, low initial depletion voltage and radiation hardness. In addition, the through-wafer electrode technology can provide the possibility to connect 3D detectors via 3D interconnects on a wafer level. Since its introduction by S. Parker and Chris Kenney in 1997, several laboratories have started to develop 3D detector fabrication technologies. SINTEF MiNalab possesses state-of-the-art tools for deep reactive ion etching (DRIE) with the possibility of making high quality vertical electrodes. These tools have robot cassette to cassette operation, and when used together with other automated processing equipment offers the possibility of small and medium scale production. Thus in 2006, SINTEF joined the original 3D collaborators (S. Parker et.al) in an attempt to transfer the technology to a production scale, and the first prototype run of true 3D-devices with active edge was started in 2007. During this first run, many fabrication issues were encountered and the compatibility of 3D wafers with our existing fabrication tools was at times challenging. After solving the problems of adapting the DRIE tools to the 3D process, a serious problem was encountered when handling the wafers after the polysilicon deposition. In the true 3D process the through-wafer electrodes are formed by filling the DRIE etched holes and edge trenches with highly doped polysilicon. This process, however, creates mechanical stress and bow in the wafers, making them fragile and problematic to handle. Despite the fabricating issues, the first prototype run is now near its completion and preliminary results are promising. Good p-n junction characteristics has been shown on successfully completed ATLAS n-readout devices made on n-type wafers, with a leakage current of less than 0.5 nA per pixel. This talk addresses the fabrication issues, and presents the measured results on the first 3D prototype at SINTEF MiNaLab.
        Speaker: Dr Angela Kok (SINTEF)
        Slides
      • 10:30
        Status of 3D detectors development at FBK-irst 15m
        The status of 3D detector development at FBK-irst will be reviewed. In particular, we will present the fabrication process of the double-sided, double-type 3D detectors (3D-DDTC) along with selected results from the experimental characterization of detectors and test structures from the first 3D-DDTC batch made on n-substrates.
        Speaker: Maurizio Boscardin (Fondazione Bruno Kessler)
        Slides
      • 10:45
        CCE of 3D-STC_IRST pre/post annealing 15m
        Speaker: Andrea Zoboli (Universita' di Trento e INFN)
        Slides
    • 11:00 11:30
      Coffee break 30m
    • 11:30 13:00
      Pixels
      • 11:30
        Overview of Pixel Detector Activities for the ATLAS Upgrade 30m
        To cope with the increased luminosity of SLHC, the complete inner tracker of ATLAS must be upgraded. The talk aims to give an overview of current pixel detector activities with emphasis on R&D activities outside of 3D- and p-type-sensors. Apart from sensors, also FE developments and challenges for powering and cooling will be briefly described.
        Speaker: Daniel Muenstermann (TU Dortmund)
        Slides
      • 12:00
        Development of Monolithic Silicon Detectors based on OKI CMOS SOI technology 30m
        In order to utilize the SOI wafer such that the CMOS electronics is processed in the silicon layer (SOI) over the SiO2 insulator layer and the active sensor layer in the handle wafer below the insulator layer, a monolithic silicon detector without bump bondings. We have been developing pixel detectors in collaboration with industry to utilize its advanced technology on 0.15 µm and 0.20 µm rules. We report on the development status, radiation damage effect on the SOI transistors, and the latest demonstrators.
        Speaker: Yoshinobu Unno (KEK)
        Slides
      • 12:30
        3D interconnection for pixel detectors 30m
        3D interconnection technologiy opens new possibilties for advanced pixel detectors. These include material reduction, lower pitch, more functionality per pixel, 4-side buttable layouts and multi-layer ASICs with optimized technologies. An overview on the technology and current or planned projects will be given.
        Speaker: Hans-Günther Moser (Max-Planck-Institut)
        Slides
    • 13:00 14:30
      Lunch 1h 30m