Yoshinobu Unno
(KEK)
14/04/2008, 14:30
Radiation hardness properties of p-type substrate silicon micro-strip detectors: neutron and proton irradiations
We have fabricated silicon microstrip sensors in 150 mm p-type wafers and carried out irradiation of protons of 70 MeV up to 2x10^15 1-MeV neutron equivalent/cm^2. Full depletion votages along the fluence of the protons of 70 MeV have shown quite different development than those in 100 mm p-type wafers. The sensors are made of different isolation structures in the n-strip side....
Gregor Kramberger
(Jozef Stefan Institute)
14/04/2008, 15:00
Radiation hardness properties of p-type substrate silicon micro-strip detectors: neutron and proton irradiations
A large set of diodes processed by Micron on MCz and FZ n and p type materials was investigated up to equivalent fluences of 3e15 cm-2. Charge collection measurements were performed in addition to C-V. The charge collection efficiency was found to be better than expected from simulations and good agreement was found between full depletion voltages determined from charge collection and CV measurements.
Vladimir Cindro
(Jozef Stefan Institute)
14/04/2008, 15:30
Radiation hardness properties of p-type substrate silicon micro-strip detectors: neutron and proton irradiations
Radiation effects in standard FZ, DOFZ and MCZ Si diodes were evaluated with C/V, I/V and TCT measurements. FDV, I and trapping times were measured. Diodes were irradiated with protons and neutrons with fluences up to 3*10**14. Measurements after combined proton/neutron irradiation will be also shown.
