14–16 Apr 2008
Residencia CSIC-Generalitat de Catalunya, Barcelona, Spain
Europe/Zurich timezone

Characterization of P-type Silicon Detectors Irradiated with Neutrons

14 Apr 2008, 17:00
30m
Residencia CSIC-Generalitat de Catalunya, Barcelona, Spain

Residencia CSIC-Generalitat de Catalunya, Barcelona, Spain

Residencia de Investigadores del CSIC-Generalitat de Catalunya Carrer Hospital, 64. E08001, Barcelona, Spain
Radiation hardness properties of p-type substrate silicon micro-strip detectors: neutron and proton irradiations P-type strip detectors 3

Speaker

Mercedes Minano Moya (Instituto de Fisica Corpuscular (IFIC) UV-CSIC)

Description

Silicon p-type detectors are being investigated for the development of radiation tolerant detectors for the luminosity upgrade of the CERN large hadron collider (super-LHC). Microstrip detectors have been fabricated by CNM-IMB with a n-side read-out on p-type high resistivity float zone substrates. They have been irradiated with neutrons at the TRIGA Mark II nuclear reactor in Ljubljana. The irradiation fluxes match with the expected doses for the inner tracker at the sLHC (up to 8E015 equivalent 1MeV neutrons cm-2). DOFZ and MCz silicon substrate technologies are evaluated. The macroscopic properties of the irradiated prototypes after irradiation were characterized at the IFIC-Valencia laboratory. The charge collection studies were carried out by means of a radioactive source setup as well as by an infrared laser illumination.

Primary author

Mercedes Minano Moya (Instituto de Fisica Corpuscular (IFIC) UV-CSIC)

Presentation materials