3rd Workshop on Advanced Silicon Radiation Detectors (3D and P-type Technologies)

Simulation of moderated p-spray isolations with DIOS and TeSCA

15 Apr 2008, 10:00

30m

Residencia CSIC-Generalitat de Catalunya, Barcelona, Spain

Radiation hardness properties of p-type substrate silicon micro-strip detectors: neutron and proton irradiations P-type strip detectors 4

Speaker

Michael Beimforde (Werner-Heisenberg-Institut - Max-Planck-Institut fuer Physik)

Description

The electrical isolation between the ATLAS pixels plays an important role for the electric fields in the pixel sensors and has an influence on the spatial resolution. The simulation programs Dios and TeSCA are used to simulate n-in-n and n-in-p sensors with different geometries and isolation parameters before and after irradiation to study their effects on the operating conditions.

Presentation materials

Slides

BeimfordeBarcelona.pdf