3rd Workshop on Advanced Silicon Radiation Detectors (3D and P-type Technologies)

Measurement of charge collection in p-type microstrip sensors with SCT128 chip

14 Apr 2008, 17:30

30m

Residencia CSIC-Generalitat de Catalunya, Barcelona, Spain

Radiation hardness properties of p-type substrate silicon micro-strip detectors: neutron and proton irradiations P-type strip detectors 3

Speaker

Igor Mandic (Jožef Stefan Institute)

Description

A setup for measurements with SCT128 chip was built in Ljubljana. First results of charge collection measurements with this setup will be presented. Measurements were made with miniature p-type microstrip sensors with n-side readout from Micron. Sensors were irradiated with neutrons up to 1 MeV equivalent fluence of 3e15 n/cm2.

Presentation materials

Slides

Mandic_Barcelona08.pdf

Mandic_Barcelona08.ppt