3rd Workshop on Advanced Silicon Radiation Detectors (3D and P-type Technologies)

On MCz SCSI after 24 GeV/c proton irradiation

15 Apr 2008, 09:30

30m

Residencia CSIC-Generalitat de Catalunya, Barcelona, Spain

Radiation hardness properties of p-type substrate silicon micro-strip detectors: neutron and proton irradiations P-type strip detectors 4

Speaker

Donato Creanza (Dipartimento Interateneo di Fisica-Universita degli Studi di Bar)

Description

Several MCz diodes from the SMART production, of both n- and p- type, have been irradiated on the 24 GeV/c proton beam at CERN up to a fluence of 1.59 10^15 neq. In the framework of a common RD50 research program, electrical characterization and TCT studies have been performed as a function of the annealing time. All irradiated samples show a clear double junction effect. Both annealing and TCT studies seem to indicate the occurrence of type inversion of p-type MCz diodes at high fluences.

Presentation materials

Slides

Donato.pdf

Donato.ppt