3rd Workshop on Advanced Silicon Radiation Detectors (3D and P-type Technologies)

Session

Pixels

D15-A1

16 Apr 2008, 11:30

Residencia CSIC-Generalitat de Catalunya, Barcelona, Spain

16. Overview of Pixel Detector Activities for the ATLAS Upgrade

Daniel Muenstermann (TU Dortmund)

16/04/2008, 11:30

Radiation hardness properties of 3D detectors (results and simulations)

To cope with the increased luminosity of SLHC, the complete inner tracker of ATLAS must be upgraded. The talk aims to give an overview of current pixel detector activities with emphasis on R&D activities outside of 3D- and p-type-sensors. Apart from sensors, also FE developments and challenges for powering and cooling will be briefly described.

12. Development of Monolithic Silicon Detectors based on OKI CMOS SOI technology

Yoshinobu Unno (KEK)

16/04/2008, 12:00

Radiation hardness properties of p-type substrate silicon micro-strip detectors: neutron and proton irradiations

In order to utilize the SOI wafer such that the CMOS electronics is processed in the silicon layer (SOI) over the SiO2 insulator layer and the active sensor layer in the handle wafer below the insulator layer, a monolithic silicon detector without bump bondings. We have been developing pixel detectors in collaboration with industry to utilize its advanced technology on 0.15 µm and 0.20 µm...

0. 3D interconnection for pixel detectors

Hans-Günther Moser (Max-Planck-Institut)

16/04/2008, 12:30

Report on new techniques for interconnectivty (3D-connectivity)

3D interconnection technologiy opens new possibilties for advanced pixel detectors. These include material reduction, lower pitch, more functionality per pixel, 4-side buttable layouts and multi-layer ASICs with optimized technologies. An overview on the technology and current or planned projects will be given.