TWEPP 2014 - Topical Workshop on Electronics for Particle Physics

Session

Plenary 9

26 Sept 2014, 11:05

Centre des Congrès - Aix en Provence, France

Conveners

Plenary 9

• Philippe Farthouat (CERN)

110. 10 MGy Total Dose Evaluation of 65 nm CMOS Technology for the High Luminosity LHC Upgrades

Mohsine Menouni (Centre National de la Recherche Scientifique (FR))

26/09/2014, 11:05

ASICs

Oral

The radiation tolerance of the 65 nm bulk CMOS devices is investigated using 10 keV X-rays up to a Total Ionizing Dose (TID) of 10 MGy and the implications on the DC performance of n and p channels transistors are presented. For a dose level of 10 MGy, transconductance loss is near 100% for the narrow channel pmos device making the device completely off. Annealing at 100°C helps devices to...

106. Neutron and X-ray Irradiation of Silicon Based Mach-Zehnder Modulators

Sarah Seif El Nasr (CERN, University of Bristol (GB))

26/09/2014, 11:30

Opto

Oral

We report on our recent investigation into the potential for using silicon-based Mach-Zehnder modulators in the harshest radiation environments of the High-Luminosity LHC. The effect of ionizing and non-ionizing radiation on the performance of the devices have been investigated using the 20 MeV neutron beam line at the Cyclotron Resource Centre in Louvain-La-Neuve and the X-ray irradiation...