- Philippe Farthouat (CERN)
Mohsine Menouni (Centre National de la Recherche Scientifique (FR))
9/26/14, 11:05 AM
The radiation tolerance of the 65 nm bulk CMOS devices is investigated using 10 keV X-rays up to a Total Ionizing Dose (TID) of 10 MGy and the implications on the DC performance of n and p channels transistors are presented. For a dose level of 10 MGy, transconductance loss is near 100% for the narrow channel pmos device making the device completely off. Annealing at 100°C helps devices to...
Sarah Seif El Nasr (CERN, University of Bristol (GB))
9/26/14, 11:30 AM
We report on our recent investigation into the potential for using silicon-based Mach-Zehnder modulators in the harshest radiation environments of the High-Luminosity LHC. The effect of ionizing and non-ionizing radiation on the performance of the devices have been investigated using the 20 MeV neutron beam line at the Cyclotron Resource Centre in Louvain-La-Neuve and the X-ray irradiation...