Speaker
Mr
Titipong Phoopathong
(Theoretical Condensed Matter Physics Research Unit, Department of Physics, Faculty of Science, Mahasarakham University, THAILAND 44150)
Description
Stability diagrams are a powerful tool for both analysis and design of single electron devices. These diagrams generally show stable regions and also state-transition lines. This tool has become useful for the investigation on the tunneling process within the devices. In this work, the procedure to build a stability diagram of the single electron transistor has therefore presented. The fundamental concept of the electrostatic potential was employed in the mathematical modelling of the electron-tunneling process between the electrode and the quantum dot (island). With a single isolated metal island in the architecture,four linear equations were modeled based on the possible tunneling events in the single-electron transistor. By changing the number of the excess electrons in the island, the stability diagram of the single-electron transistor was plotted to display the transition borders between regions. This technique can be extensively applied to the study of other single-electron devices, such as single-electron pumps.
Primary author
Mr
Titipong Phoopathong
(Theoretical Condensed Matter Physics Research Unit, Department of Physics, Faculty of Science, Mahasarakham University, THAILAND 44150)
Co-authors
Mr
Pramote Rungsri
(Theoretical Condensed Matter Physics Research Unit, Department of Physics, Faculty of Science, Mahasarakham University, THAILAND 44150)
Dr
Prathan Srivilai
(Theoretical Condensed Matter Physics Research Unit, Department of Physics, Faculty of Science, Mahasarakham University, THAILAND 44150)
Dr
Supachai Ritjareonwattu
(Theoretical Condensed Matter Physics Research Unit, Department of Physics, Faculty of Science, Mahasarakham University, THAILAND 44150)
