20-22 May 2015
Asia/Bangkok timezone
The Centennial Celebration of General Relativity Theory and 80 Years of Thai Physics Graduate

Characteristics of AZO/Ag/AZO Tri-layer Film by RF-sputtering

21 May 2015, 13:00
3h 30m
Board: MNA-44
Poster presentation Material Physics, Nanoscale Physics and Nanotechnology Poster-3

Speaker

Mr Yuttapichai Khummanee (Department of Physics, Faculty of Science, Kasetsart University, Bangkok, THAILAND 10900)

Description

Al-doped ZnO (AZO)/Ag/AZO tri-layer thin films were deposited on glass substrate by RF-sputtering. The thickness of AZO layer at the top and bottom of the film was varied at 35, 50 and 90 nm and the thickness of Ag layer was fixed at 62 nm. XRD result confirms that all AZO/Ag/AZO tri-layer films were composed of ZnO (HCP) phase in (002) direction and Ag (FCC) phase in (111) and (200) directions. Intensity of ZnO phase was directly increased with increasing AZO layer-thickness. The electrical resistance of the tri-layer film was decreased with increasing the AZO-thickness. The transmittance pattern of the film was significantly depended on the AZO thickness. Tri-layer film with AZO thickness of 35, 50 and 90 nm showed the average transmittance of 24, 28 and 15% in the visible region, respectively and also displayed the maximum transmittance of 50%, 35% and 28% at wavelength of 400, 500 and 700 nm, respectively. The results implied that transmittance pattern, transmission region and wavelength of maximum transmission of AZO/Ag/AZO tri-layer film can be manipulated by the AZO layer thickness.

Primary author

Mr Yuttapichai Khummanee (Department of Physics, Faculty of Science, Kasetsart University, Bangkok, THAILAND 10900)

Co-author

Dr Watcharee Rattanasakulthong (Department of Physics, Faculty of Science, Kasetsart University, Bangkok, THAILAND 10900)

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