Speaker
Mr
Tanachai Ponken
(Departmet of Physics, Faculty of Science, Khon Kaen University, 40002, Thailand)
Description
The electrical resistivity of thin films of Ga-P-Ti alloys, deposited on glass substrates by an asymmetric bipolar pulse-dc magnetron sputtering method under Ar atmosphere, has been investigated. The sputtering targets containing compacted GaP powder and metallic titanium sheet with the surface ratio GaP:Ti of 8:1, 5:1, 2:1 and 1:1 were employed. The electrical resistivity of the deposited thin films was measured using the standard van-der-pauw four probe technique under dark and illumination with white light of 70,000 lux conditions. It was found that, under dark condition, the electrical resistivity increases from 7.547E-1 to 9.469E+1 $\Omega$.m for the films deposited from the target having GaP:Ti of 8:1 and 5:1, before sharply reduces to 1.538E-4 and 3.899E-5 $\Omega$.m for the films obtained from the targets having GaP:Ti of 2:1 and 1:1, respectively. The electrical resistivity measured under the lighting condition shows the similar trend. The results indicated that the thin film from the targets having GaP:Ti of 8:1 and 5:1 are semiconductor-like while those from the targets having GaP:Ti of 2:1 and 1:1 are metal-like. The observed behaviors agree well with those found from optical property measurement carried out early. However, the changes of electrical resistivity in responses to lights are inconclusive.
Primary author
Mr
Tanachai Ponken
(Departmet of Physics, Faculty of Science, Khon Kaen University, 40002, Thailand)
Co-author
Thanusit Burinprakhon
(Departmet of Physics, Faculty of Science, Khon Kaen University, 40002, Thailand)
