Speaker
Mr
Komsun Rapaway
(School of Physics, Institute of Science, Suranaree University of Technology, Nakorn Ratchasima, THAILAND 30000)
Description
ZnO nanowires have been widely studied due to their unique direct wide band gap of 3.37 eV making it attractive for electronics, optical detectors and light-emitting diodes application. In this work, we focus on ZnO nanowire-metal junction. N-type ZnO nanowires were growth vertically on a silver substrate (of ratio1:1of HTMA:Zinc nitrate) by hydrothermal process at the varied concentration. Characterization ZnO nanowires was conducted using conductive atomic force microscopy allowing measurement of I-V characteristic from an individual nanowire. The I-V characteristic reveals a resistive switching behavior, which is sensitive to acquisition time. Understanding the I-V characteristic could shade light on the origin of resistive switching behavior in ZnO nanowires and the nature of ZnO-silver junction. This type of understanding is crucial information for applications.
Primary author
Mr
Komsun Rapaway
(School of Physics, Institute of Science, Suranaree University of Technology, Nakorn Ratchasima, THAILAND 30000)
Co-authors
Dr
Annop Klamchuen
(National Nanotechnology Center, National Science and Technology Development Agency, Pathum Thani, THAILAND 12120)
Dulyawat Doonyapisut
(School of Physics, Institute of Science, Suranaree University of Technology, Nakorn Ratchasima, THAILAND 30000)
Mr
Panithan Sriboriboon
(School of Physics, Institute of Science, Suranaree University of Technology, Nakorn Ratchasima, THAILAND 30000)
Dr
Worasom Kundhikanjana
(School of Physics, Institute of Science, Suranaree University of Technology, Nakorn Ratchasima, THAILAND 30000)
