Speaker
Dr
Prayoonsak Pluengphon
(Division of Physical Science, Faculty of Science and Technology, Huachiew Chalermprakiet University, Samutprakarn 10540, Thailand)
Description
We performed ab initio calculation based on density functional theory for studying high-pressure properties of doped ZnO. At the beginning, the impurities of Al and Ga atoms into ZnO were investigated up to 10 GPa. The tendency of enthalpy formation under pressure was studied. The high-pressure properties such as lattice parameter, electron density and elastic constant were investigated. It was found that the enthalpy formation of doped ZnO decreases when pressure increasing. The chemical bonds and electron density differences of ZnO unit cells were changed by adding the Al and Ga atoms.
Author
Dr
Prayoonsak Pluengphon
(Division of Physical Science, Faculty of Science and Technology, Huachiew Chalermprakiet University, Samutprakarn 10540, Thailand)
Co-author
Dr
Thiti Bovornratanaraks
(Extreme Conditions Physics Research Laboratory, Department of Physics, Faculty of Science, Chulalongkorn University, Bangkok 10330, Thailand)
