Speakers
Ms
Kamonpan Pengpat
(Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai, 50200, Thailand.)Mr
Pichitchai Butnoi
(Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai, 50200, Thailand)
Description
Lead zirconate titanate (PZT) films have been widely used for micro applications because of their excellent ferroelectric and piezoelectric properties. In this study, surface morphology and electrical properties of lead zirconate titanate films have been investigated. The PZT films have been prepared by a sol-gel method and deposited on silicon wafers by spin coating under different annealing processes. Phase formation behavior of these films was investigated by an X-ray diffraction (XRD). The Atomic Force Microscopy (AFM) explains morphology, such as surface roughness, grain shape and grain size. Dielectric properties were studied using LCR meter measurement and discussed in this paper. PZT films show a perovskite phase at annealing temperature of 650 °C. For the films thickness were in the range of 500 – 900 nm. Average grain size increase with increasing the annealing temperatures. Dielectric constant show the highest value which was found at condition of 650 °C.
Author
Mr
Pichitchai Butnoi
(Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai, 50200, Thailand)
Co-authors
Ms
Kamonpan Pengpat
(Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai, 50200, Thailand.)
Mr
Nuttapon Pisitpipathsin
(Department of Applied Physics, Faculty of Sciences and Liberal Arts , Rajamangala University of Technology Isan , Nakhon Ratchasima 3000 , Thailand.)
Ms
Patamas Bintachitt
(Department of Physics, Faculty of Science, Srinakharinwirot University, Sukhumvit, Bangkok, 10110, Thailand.)
Mr
Putapon Pengpad
(Thai Microelectronics Center (TMEC), National Electronics and Computer Technology Center, Chachoengsao, 24000, Thailand)
