10th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors, Xi'an, China

3D simulation and modeling of ultra-fast 3D silicon detectors

26 Sept 2015, 19:01

1m

Multi-function Hall (International Conference Center (Nanyang Hotel))

POSTER Simulations and Manufacturing After dinner POSTER session, with drinks: (All presenters are requested/encouraged to attend their posters; All participants are requested to participate the session, with drinks!)

Speaker

Ms Manwen Liu (Xiangtan University)

Description

3D simulation and modeling of 3D silicon detectors with short electrode spacing and relatively thin thickness (200μm) have been showed in this paper. The column spacing L_p is in the range of 5μm to 10μm. At a bias voltage of only a few volts, this structure’s response time can be as fast as 10’s of ps. In this paper, we will report some simulated electrical characteristics of this detector structure through systematic 3D simulations by Silvacos TCAD tools. Detector electric potential, electric field, hole concentration, leakage current, and capacitance at various bias voltages will be presented. The full depletion voltages calculated by CV characteristics are compared by those obtained from potential and holes concentration profile simulations.