10th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors, Xi'an, China

Degradation Enhancement of Gate-controlled Lateral PNP Bipolar Transistors Induced by Mixed Irradation of Neutron and Gamma

26 Sept 2015, 19:38

1m

Multi-function Hall (International Conference Center (Nanyang Hotel))

POSTER Radiation damage, Environmental radiation monitoring After dinner POSTER session, with drinks: (All presenters are requested/encouraged to attend their posters; All participants are requested to participate the session, with drinks!)

Speaker

Ms Chenhui Wang (State Key Laboratory of Intense Pulsed Radiation Simulation and Effect (Northwest Institute of Nuclear Technology), Xi’an 710024, China)

Description

Four types of gate-controlled lateral PNP bipolar transistors have been designed in a commercial bipolar process to investigate their sensitivity to radiation-induced degradation. New experimental and simulated results concerning neutron displacement effects, total ionizing dose effects and ionizing/displacement synergistic effects are presented. Neutron radiation effect experiments on the gate-controlled lateral PNP bipolar transistors have been performed at Xi’an pulsed reactor and the neutron fluence is up to 1×10^13 cm^(-2). Total dose absorbed by the transistors in gamma radiation effect experiments is up to 30 krad(Si). Identical transistors have been also exposed to the mixed irradiation of 1×10^13 cm^(-2) neutron and 30 krad(Si) gamma simultaneously to accomplish the ionizing/displacement synergistic effect experiments. The data reveal that the current and gain degradations induced by the mixed irradiation of neutron and gamma are notably more severe than the sum of neutron and gamma radiation degradations measured individually. Analysis that supported by device simulation shows that the positive charge in the oxide layer and Si/SiO2 interface traps induced by gamma irradiation can enhance the recombination processes of carriers in the bulk defects induced by the neutron irradiation, and this is the main cause of ionizing/displacement synergistic effects on the gate-controlled lateral PNP bipolar transistors.