10th Anniversary "Trento" Workshop on Advanced Silicon Radiation Detectors

Session

TCAD Simulations

18 Feb 2015, 16:05

"Stringa" Conference Hall (FBK, Trento)

Conveners

TCAD Simulations

• Claudio Piemonte (FBK)

11. TCAD Simulations of Radiation Damage Effects at High Fluences in Silicon Detectors with Sentaurus TCAD

Francesco Moscatelli (Universita e INFN, Perugia (IT))

18/02/2015, 16:05

In this work we propose the application of a radiation damage model based on the introduction of deep level traps/recombination center suitable for device level numerical simulation of radiation detectors at very high fluences (e.g. 1-2x10^16 1 MeV equivalent neutrons). The model is based on a past modeling scheme featuring three levels with donor removal and slightly increased introduction...

37. Doping profiles and radiation damage

Vagelis Gkougkousis (Laboratoire de l'Accelerateur Lineaire (FR))

18/02/2015, 16:25

Radiation hardness constrains imposed by the High luminosity LHC upgrade, demand detailed modelling and simulation of substrate damage in the most basic level. In that direction, several implanted samples, which have undergone the first steps of the fabrication process, are simulated and measured. Results are then transposed to a diode test production of similar characteristics, fabricated...

20. Design of planar p-on-n pixel sensor with an optimized active-edge region for the next generation of FELs

Mr Mohamed El Amine Benkechkache (University of Trento)

18/02/2015, 16:45

Future experiments at the European X-Ray Free Electron Laser (XFEL) will require silicon pixel sensors with demanding performance: a wide dynamic range from 1 up to 104 12-keV photons per pixel, a small pixel pitch (~100 μm), minimum dead area and a radiation tolerance of 1GGy per 3 years of operation. Therefore, the development of four-side buttable tile detectors that meet such requirements...

100. The RD53 programme and the CHIPIX65 / INFN project for the development of pixel readout chip for extreme rate and radiation

Lino Demaria (Universita e INFN (IT))

18/02/2015, 17:05

The scope of RD53 is the development of pixel readout Integrated Circuits (IC) for the next generation of pixel readout chips to be used for the ATLAS and CMS Phase 2 pixel detector upgrades and future CLIC pixel detectors. This does not imply that ATLAS and CMS must use the same exact pixel readout chip, as most of the development, test and qualification effort needed is independent...