28 September 2015 to 2 October 2015
Lisbon
Europe/Zurich timezone

Past and future microelectronics in HEP

29 Sept 2015, 14:00
45m
Grande Anfiteatro (Lisbon)

Grande Anfiteatro

Lisbon

IST (Instituto Superior Técnico ) Alameda Campus Av. Rovisco Pais, 1 1049-001 Lisboa Portugal
Plenary Invited Plenary

Speaker

Alessandro Marchioro (CERN)

Description

Moore’s law celebrates this year its 50th anniversary. The technologies developed following its paradigm have brought profound changes in the way we work and communicate in our everyday life. The massive introduction of microelectronics in the design of experiments and detectors for High Energy Physics at LHC has also changed the way we conceive, design and operate experiments. Despite the innumerable threats of imminent saturation of its capabilities, microelectronics has continued to allow higher levels of integration at a lower cost per transistor, following the original Moore’s curve. New HEP experiments and upgrades for the 2020’s can now be planned with much more ambitious plans where perhaps the only limits will derive from our imagination and from our ability in managing complex projects and their risks, rather than from any intrinsic technological limitation.

Presentation materials