TID results of a new 0.13µm technology for future HEP ASIC design

by Stefano Michelis (CERN)

Tuesday 10 Feb 2015, 09:30 → 10:30 Europe/Zurich

13/2-005 (CERN)

Since the future of the legacy 130nm technology is uncertain, a new foundry has to be found for future HEP ASIC designs. In order to characterize this new technology for radiation tolerance a test chip has been designed and produced. It contains single devices as core NMOS, PMOS, diodes and I/O transistors with different dimensions. In this seminar results from Total Ionizing Dose (TID) tests will be presented.

Slides 2015_01_10_-_TSMC130_-_Seminar_130nm2.pdf