13–17 Feb 2006
Tata Institute of Fundamental Research
Europe/Zurich timezone

New Geant4 physics processes for simulation at the electronvolt scale

15 Feb 2006, 09:00
9h 10m
Tata Institute of Fundamental Research

Tata Institute of Fundamental Research

Homi Bhabha Road Mumbai 400005 India
poster Event processing applications Poster

Speakers

Dr Barbara Mascialino (INFN Genova)Prof. Gerard Montarou (Univ. Blaise Pascal Clermont-Ferrand)Dr Maria Grazia Pia (INFN GENOVA)Dr Petteri Nieminen (ESA)Prof. Philippe Moretto (CENBG)Dr Riccardo Capra (INFN Genova)Dr Sebastien Incerti (CENBG) Ziad Francis (Univ. Blaise Pascal Clermont-Ferrand)

Description

The extension of Geant4 simulation capabilities down to the electronvolt scale is required for precision studies of radiation effects on electronics and detector components, and for micro-/nano-dosimetry studies in various experimental environments. A project is in progress to extend the coverage of Geant4 physics to this energy range. The complexity of the problem domain is discussed - such as, for instance, the fact that in this energy range process models are material-dependent. The physics models of new processes implemented in the Geant4 Toolkit are presented: elastic scattering, charge increase/decrease, excitation, ionisation. A new approach to policy-based process design in Geant4 is described. Results concerning various processes at the electronvolt scale are presented.

Primary authors

Dr Barbara Mascialino (INFN Genova) Prof. Gerard Montarou (Univ. Blaise Pascal Clermont-Ferrand) Dr Maria Grazia Pia (INFN GENOVA) Dr Petteri Nieminen (ESA) Prof. Philippe Moretto (CENBG) Dr Riccardo Capra (INFN Genova) Dr Sebastien Incerti (CENBG) Ziad Francis (Univ. Blaise Pascal Clermont-Ferrand)

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