Speaker
Jörn Lange
(Hamburg University)
Description
Epitaxial silicon pad diodes of 75 μm, 100 μm and 150 μm thickness and both ST and DO n-type material have been investigated after 24 GeV/c proton irradiation (CERN PS) in an equivalent fluence range between 1e14 n/cm² and 1e16 n/cm². A new TCT setup with 670 nm laser light enabled the measurement of time-resolved electron current pulse shapes in 150 μm thick diodes. Thus the charge correction method could be used in order to extract the trapping time constant. Moreover CCE measurements with 5.8 MeV alpha-particles will be presented and compared to simulation.
Author
Jörn Lange
(Hamburg University)
Co-authors
Dr
Eckhart Fretwurst
(Hamburg University)
Prof.
Gunnar Lindström
(Hamburg University)
Mr
Julian Becker
(Hamburg University)
