Name: 7th RD50 Workshop
Start: 2005-11-14T09:00:00+01:00
End: 2005-11-16T15:00:00+01:00
Location: CERN

7th RD50 Workshop

from Monday, 14 November 2005 (09:00) to Wednesday, 16 November 2005 (15:00)

Monday, 14 November 2005
09:00
09:00 - 09:15
Room: 40-S2-A01
Contributions

09:00 Introduction - Mara Bruzzi and Michael Moll
09:15
09:15 - 13:30
Room: 40-S2-A01
Contributions

09:15 A simple model for the equivalent circuit of heavily irradiated Si diodes in standard CV measurements - Alexandre Chilingarov (Lancaster University, UK)

09:35 Comparison of full depletion voltage values extracted from C-V, I-V characteristics and charge collection measurements for a highly irradiated epi-detector - Eckhart Fretwurst (University of Hamburg)

09:55 Radiation Tolerance of EPI-Detectors - Recent results and future plans - Gunnar Lindstroem (Institut)

10:15 Room temperature annealing of epi-Si detectors - Irena Dolenc (Jozef Stefan Institute)

10:35 Coffee Break

11:05 Radiation hardness of pad detectors manufactured on different silicon substrates - Vladimir Khomenkov (INFN)

11:25 Discussion: Pad Detector Characterization - Gregor Kramberger and Eckhart Fretwurst

11:55 Lunch Break
13:15
13:15 - 15:35
Room: 40-S2-A01
Contributions

13:15 The issue of the doping disuniformity in p-type MCz Si detectors - Mara Bruzzi (INFN)

13:35 Results on Technotest sub-project: long term annealing of CZ Si detectors irradiated by 24 GeV/c protons - Elena Verbitskaya (Ioffe Physico-Technical Institute RAS)

13:55 An annealing study on 23 GeV proton irradiated n-type MCz pad detectors - Michael Moll (CERN)

14:15 Initial data on the DRIVE approach: results and analysis - Zheng Li (Brookhaven)

14:35 Discussion: Defect Engineering - Eckhart Fretwurst and Gregor Kramberger

15:05 Coffee Break
15:30
15:30 - 16:45
Room: 40-S2-A01
Contributions

15:35 Radiation tolerance of GOSSIP - Fred Hartjes (NIKHEF)

15:55 First electrical characterization of 3D detectors with electrodes of the same doping type - Claudio Piemonte (ITC-irst)

16:15 Discussion on New Structures - Richard Bates
17:00
17:00 - 20:00
Room: 40-S2-A01
Contributions

17:00 Motivations for the MPI Semiconductor Lab to join RD50 - Hans-Guenther Moser (Max-Planck-Institut fuer Physik (HLL))
Tuesday, 15 November 2005
09:00
09:00 - 11:20
Room: AB Auditorium Meyrin
Contributions

09:00 Lifetime in highly irradiated Si (preliminary) - Juozas Vaitkus (Vilnius)

09:20 Damage in silicon from very high energy protons - Gordon Davies (Kings College London)

09:40 Localized energy levels generated in Magnetic Czochralski silicon by proton irradiation and their influence on the sign of space charge density - David Menichelli (INFN & University of Florence)

10:00 Defect profiles of epitaxial silicon detectors of different thickness irradiated with 23 GeV protons - Frank Hoenniger (University of Hamburg)

10:20 Coffee Break

10:50 Discussion: Defect and Material Characterization - Mara Bruzzi / Michael Moll
11:20
11:20 - 16:50
Room: AB Auditorium Meyrin
Contributions

11:20 Thermal issues for running Silicon detectors at the SLHC. - Joost Vossebeld (University of Liverpool)

11:40 Numerical simulations of heavily irradiated p-type and n-type silicon detectors - Marco Petasecca (University of Perugia)

12:00 Lunch Break

13:30 Study of radiation damage induced by 24 GeV/c and 26 MeV protons on heavily irradiated Magnetic Czochralski and Float Zone silicon detectors - Norman Manna (INFN BARI)

13:50 Progress on p-type isolation technology - Manuel Lozano (CNM Barcelona)

14:10 TCAD simulations of isolation structures for p-type silicon microstrip detectors - Claudio Piemonte (ITC-irst)

14:30 Progress on Radiation Hardness tests on SiGe technologies for s-LHC - Miguel Ullán (CNM)

14:50 Signal-to-Noise Ratio fot silicon Strip detectors at the LHC using p-type detectors and SiGe front-end electronics - Hartmut Sadrozinski (SCIPP)

15:10 Coffee Break

15:40 Pixel Devices on the common RD50 n-in-p Strip Detector Mask Set (6 inch) - Tilman Rohe (Paul)

16:00 Update on Common Rd50 Project on 6 p-type wafers - Hartmut Sadrozinski (SCIPP)

16:20 Discussion: Full Detector Systems
17:00
17:00 - 18:30
Room: AB Auditorium Meyrin
Contributions

17:00 Discussion
19:00

19:00 - 23:55
Wednesday, 16 November 2005
09:00
09:00 - 10:10
Room: 500/1-001 - Main Auditorium
Contributions

09:00 RD50 Status Report - Mara Bruzzi and Michael Moll

09:40 RD39 Status Report - Jaakko Haerkoenen and Zheng Li
10:10
10:10 - 12:35
Room: 40-S2-A01
Contributions

10:10 Coffee Break

10:40 Defects and deep centres in the irradiated GaN and the results of last tests - Juozas Vaitkus (Vilnius)

11:00 Characterisation of defect centres in epitaxial GaN - Michal Kozubal (Institute)

11:20 Radiation Hardness of Minimum Ionizing Particle Detectors Based on SiC p+n Junctions - Francesco Moscatelli (DIEI and INFN of Perugia, CNR-IMM of BO Italy)

11:40 Report on SiC project on RD50 common structures - Mara Bruzzi (INFN)

12:00 Discussion on New Materials - Elena Verbitskaya

12:30 End of Workshop - Mara and Michael
13:30

13:30 - 15:00
Room: 40-S2-A01

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