Comparison of full depletion voltage values extracted from C-V, I-V characteristics and charge collection measurements for a highly irradiated epi-detector20m40-S2-A01
40-S2-A01
CERN
E. Fretwurst, F. Hönniger, G. Lindström
Institut for Experimental Physics, University of Hamburg
Speaker:
Eckhart Fretwurst(University of Hamburg)
more information
transparencies
09:55
Radiation Tolerance of EPI-Detectors - Recent results and future plans20m40-S2-A01
40-S2-A01
CERN
G. Lindstroem, I. Dolenc, E. Fretwurst, F. Hoenniger, G. Kramberger, M. Moll, E. Nossarzewska, I. Pintilie, R. Röder
Inst. of Exp. Phys., Univ of Hamburg; Jozef Stefan Inst., Univ. of Ljubljana; CERN; ITME Warsaw; NIMP Bucharest; CiS Erfurt
Speaker:
Gunnar Lindstroem(Institut)
more information
transparencies
10:15
Room temperature annealing of epi-Si detectors20m40-S2-A01
40-S2-A01
CERN
I. Dolenc, V. Cindro, E. Fretwurst, G. Kramberger, G. Lindstroem, I. Mandic, M. Mikuz
Jozef Stefan Institute
Speaker:
Irena Dolenc(Jozef Stefan Institute)
more information
transparencies
10:35
Coffee Break30m40-S2-A01
40-S2-A01
CERN
11:05
Radiation hardness of pad detectors manufactured on different silicon substrates20m40-S2-A01
40-S2-A01
CERN
V. Khomenkov(1), A. Litovchenko(1), M. Boscardin(2), V. Cindro(3), P. Litovchenko(4), V. Radicci(5), SMART Collaboration(6)
(1)INFN Padova, Italy; (2)ITC-irst, Trento, Italy; (3)Jozef Stefan Institute, Ljubljana, Slovenia; (4)KINR, Kiev, Ukraine; (5)INFN Bari, Italy; (6)Bari, Firenze, Padova, Perugia, Pisa, Trento.
Speaker:
Vladimir Khomenkov(INFN)
more information
transparencies
11:25
Discussion: Pad Detector Characterization30m40-S2-A01
40-S2-A01
CERN
Discussion on Pad Detector Characterization with special focus on epitaxial silicon. CZ/MCZ will be discussed at the end of the DE session.
Speaker:
Gregor Kramberger and Eckhart Fretwurst
11:55
Lunch Break1h 20m40-S2-A01
40-S2-A01
CERN
13:15
→
15:35
Defect Engineering (DE)40-S2-A01
40-S2-A01
CERN
13:15
The issue of the doping disuniformity in p-type MCz Si detectors20m40-S2-A01
40-S2-A01
CERN
M. Bruzzi for INFN Bari-Pisa-Firenze, SCIPP-UCSC, IRST-Trento
Results on Technotest sub-project: long term annealing of CZ Si detectors irradiated by 24 GeV/c protons20m40-S2-A01
40-S2-A01
CERN
E. Verbitskaya et al.
Ioffe Physico-Technical Institute RAS
Speaker:
Elena Verbitskaya(Ioffe Physico-Technical Institute RAS)
more information
transparencies
13:55
An annealing study on 23 GeV proton irradiated n-type MCz pad detectors20m40-S2-A01
40-S2-A01
CERN
Michael Moll (1), Alison G.Bates (2) and Jens Schmaler (3)
(1) CERN, Switzerland (2)University of Glasgow (3)TU Munich, Germany
Speaker:
Michael Moll(CERN)
more information
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14:15
Initial data on the DRIVE approach: results and analysis20m40-S2-A01
40-S2-A01
CERN
Zheng Li, E. Verbitskaya, V. Eremin, A. Ivanov, J. Härkönen, E.Tuovinen, P. Luukka
Brookhaven National Laboratory Upton, NY, USA Ioffe Physico-Technical Institute of Russian Academy of Sciences St. Petersburg, Russia Helsinki Institute of Physics, CERN/PH, 1211 Geneva, Switzerland
Speaker:
Zheng Li(Brookhaven)
more information
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14:35
Discussion: Defect Engineering30m40-S2-A01
40-S2-A01
CERN
Speaker:
Eckhart Fretwurst and Gregor Kramberger
15:05
Coffee Break30m40-S2-A01
40-S2-A01
CERN
15:30
→
16:45
New Structures (NS)40-S2-A01
40-S2-A01
CERN
15:35
Radiation tolerance of GOSSIP20m40-S2-A01
40-S2-A01
CERN
A.Aarts(4), J. van der Borst(2), P. Chefdeville(3), H. v.d. Graaf(1), Y. Giometaris(3), F. Hartjes(1), R. der Kinderen(2), A. Noordermeer(2), C. Salm(4), J. Schmitz(4), J. Timmermans(1) and J. Visschers(1)
NIKHEF[1], PANalytical Almelo[2], SACLAY[3] and Univ. of Twente[4]
Speaker:
Fred Hartjes(NIKHEF)
more information
transparencies
15:55
First electrical characterization of 3D detectors with electrodes of the same doping type20m40-S2-A01
40-S2-A01
CERN
Claudio Piemonte (a), Maurizio Boscardin (a), Alberto Pozza (a), Sabina Ronchin (a), Nicola Zorzi (a), Gian-Franco Dalla Betta (b), Luciano Bosisio (c)
(a) ITC-irst (b) University of Trento (c) University of Trieste
Speaker:
Claudio Piemonte(ITC-irst)
transparencies
16:15
Discussion on New Structures30m40-S2-A01
40-S2-A01
CERN
Speaker:
Richard Bates
17:00
→
20:00
RD50 Collaboration Board Meeting40-S2-A01
40-S2-A01
CERN
Will be distributed via vrvs: Mountain Virtual Room that belongs to Earth/Universe 17:00-20:30; Password required
17:00
Motivations for the MPI Semiconductor Lab to join RD5015m40-S2-A01
Defect and Material Characterization (DMC)AB Auditorium Meyrin
AB Auditorium Meyrin
CERN
09:00
Lifetime in highly irradiated Si (preliminary)20mAB Auditorium Meyrin
AB Auditorium Meyrin
CERN
J.Vaitkus, E.Gaubas, K.Jarasiunas, A.Kadys, E.Fretwurst(a)
Institute of Materials Science and Applied Research, Vilnius University, Vilnius, Lithuania; (a)Institute for Experimental Physics, University of Hamburg, Germany
Speaker:
Juozas Vaitkus(Vilnius)
more information
transparencies
09:20
Damage in silicon from very high energy protons20mAB Auditorium Meyrin
AB Auditorium Meyrin
CERN
Gordon Davies, Shusaku Hayama
Kings College London
Speaker:
Gordon Davies(Kings College London)
more information
transparencies
09:40
Localized energy levels generated in Magnetic Czochralski silicon by proton irradiation and their influence on the sign of space charge density20mAB Auditorium Meyrin
AB Auditorium Meyrin
CERN
D. Menichelli (a,b), M. Scaringella (a,b), M. Bruzzi (a,b), A. Macchiolo (b), C. Piemonte (c), N. Zorzi (c), A. Candelori (d), V. Eremin (e), E. Verbitskaya (e), I. Ilyashenko (e), I. Pintilie (f)
a) Department of Energetics, Florence; b) INFN, Florence division; c) ITC IRST, Trento; d) INFN, Padova division; e) Ioffe Phys. Tech. Inst., St. Petersbug; f) National Inst. Material Physics, Bhucarest .
Speaker:
David Menichelli(INFN & University of Florence)
more information
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10:00
Defect profiles of epitaxial silicon detectors of different thickness irradiated with 23 GeV protons20mAB Auditorium Meyrin
AB Auditorium Meyrin
CERN
Frank Hönniger, Eckhart Fretwurst, Gunnar Lindström
Institute for Experimental Physics of the University of Hamburg
Speaker:
Frank Hoenniger(University of Hamburg)
more information
transparencies
10:20
Coffee Break30mAB Auditorium Meyrin
AB Auditorium Meyrin
CERN
10:50
Discussion: Defect and Material Characterization30mAB Auditorium Meyrin
AB Auditorium Meyrin
CERN
Speaker:
Mara Bruzzi / Michael Moll
11:20
→
16:50
Full Detector Systems (FDS)AB Auditorium Meyrin
AB Auditorium Meyrin
CERN
11:20
Thermal issues for running Silicon detectors at the SLHC.20mAB Auditorium Meyrin
AB Auditorium Meyrin
CERN
P.P. Allport, G. Casse, J. Vossebeld
University of Liverpool
Speaker:
Joost Vossebeld(University of Liverpool)
more information
transparencies
11:40
Numerical simulations of heavily irradiated p-type and n-type silicon detectors20mAB Auditorium Meyrin
AB Auditorium Meyrin
CERN
M. Petasecca(1,3,*), F. Moscatelli(1,2,3), D.Passeri(1,3), G.U. Pignatel(1,3)
(1) DIEI-University of Perugia, via Duranti, 93-06131 Perugia, Italy (2) IMM-CNR sez. di Bologna, via Gobetti 101-04129,Italy (3) INFN sez. Perugia, via Pascoli, 10-06125 Perugia, Italy
Speaker:
Marco Petasecca(University of Perugia)
more information
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12:00
Lunch Break1h 30mAB Auditorium Meyrin
AB Auditorium Meyrin
CERN
13:30
Study of radiation damage induced by 24 GeV/c and 26 MeV protons on heavily irradiated Magnetic Czochralski and Float Zone silicon detectors20mAB Auditorium Meyrin
AB Auditorium Meyrin
CERN
Norman Manna SMART COLLABORATION
INFN BARI PISA FIRENZE
Speaker:
Norman Manna(INFN BARI)
more information
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13:50
Progress on p-type isolation technology20mAB Auditorium Meyrin
AB Auditorium Meyrin
CERN
M. Lozano, F. Campabadal, C. Fleta, G. Pellegrini, J. M. Rafí, M. Ullán
IMB-CNM (CSIC) Barcelona, Spain
Defects and deep centres in the irradiated GaN and the results of last tests20m40-S2-A01
40-S2-A01
CERN
J.Vaitkus, E.Gaubas, V.Kazukauskas, V.Kalendra, J.Storasta, A.Mekys (a), A.Blue, J.Grant (b)
(a)Institute of Materials Science and Applied Research, Vilnius University, Vilnius, Lithuania; (b) Dept. Physics and Astronomy, Glasgow University, Glasgow, Scotland, UK
Speaker:
Juozas Vaitkus(Vilnius)
more information
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11:00
Characterisation of defect centres in epitaxial GaN20m40-S2-A01
40-S2-A01
CERN
M. Kozubal (a), P. Kaminski (a), R. Kozlowski (a), M. Miczuga (b)and M. Pawlowski (a,b)
(a) Institute of Electronic Materials Technology, Warsaw (b) Military University of Technology, Warsaw
Speaker:
Michal Kozubal(Institute)
more information
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11:20
Radiation Hardness of Minimum Ionizing Particle Detectors Based on SiC p+n Junctions20m40-S2-A01
40-S2-A01
CERN
F. Moscatelli, A. Scorzoni,, A. Poggi, M. Bruzzi, S. Sciortino, S. Lagomarsino, G. Wagner and R. Nipoti
DIEI and INFN of Perugia, Italy CNR-IMM of Bologna Italy Dipartimento di Energetica and INFN of Florence, Italy Institut für Kristallzüchtung, Berlin, Germany
Speaker:
Francesco Moscatelli(DIEI and INFN of Perugia, CNR-IMM of BO Italy)
more information
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11:40
Report on SiC project on RD50 common structures20m40-S2-A01
40-S2-A01
CERN
M. Bruzzi, S. Miglio, C. Tosi, C. Manfredotti, A. LoGiudice, E. Vittone, C. Lanzieri, M. Kelley, Ian W. Henderson, H.F.W. Sadrozinski, G. Wagner
INFN Firenze, University of Torino, SCIPP-UCSC, IKZ-Berlin
Speaker:
Mara Bruzzi(INFN)
more information
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12:00
Discussion on New Materials30m40-S2-A01
40-S2-A01
CERN
Speaker:
Elena Verbitskaya
12:30
End of Workshop5m40-S2-A01
40-S2-A01
CERN
Speaker:
Mara and Michael
13:30
→
15:00
RD50 Discussion Session - Milestones for 200640-S2-A01