Comparison of full depletion voltage values extracted from C-V, I-V characteristics and charge collection measurements for a highly irradiated epi-detector40-S2-A01
40-S2-A01
CERN
E. Fretwurst, F. Hönniger, G. Lindström
Institut for Experimental Physics, University of Hamburg
Speaker:
Eckhart Fretwurst(University of Hamburg)
more information
transparencies
4
Radiation Tolerance of EPI-Detectors - Recent results and future plans40-S2-A01
40-S2-A01
CERN
G. Lindstroem, I. Dolenc, E. Fretwurst, F. Hoenniger, G. Kramberger, M. Moll, E. Nossarzewska, I. Pintilie, R. Röder
Inst. of Exp. Phys., Univ of Hamburg; Jozef Stefan Inst., Univ. of Ljubljana; CERN; ITME Warsaw; NIMP Bucharest; CiS Erfurt
Speaker:
Gunnar Lindstroem(Institut)
more information
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5
Room temperature annealing of epi-Si detectors40-S2-A01
40-S2-A01
CERN
I. Dolenc, V. Cindro, E. Fretwurst, G. Kramberger, G. Lindstroem, I. Mandic, M. Mikuz
Jozef Stefan Institute
Speaker:
Irena Dolenc(Jozef Stefan Institute)
more information
transparencies
6
Coffee Break40-S2-A01
40-S2-A01
CERN
7
Radiation hardness of pad detectors manufactured on different silicon substrates40-S2-A01
40-S2-A01
CERN
V. Khomenkov(1), A. Litovchenko(1), M. Boscardin(2), V. Cindro(3), P. Litovchenko(4), V. Radicci(5), SMART Collaboration(6)
(1)INFN Padova, Italy; (2)ITC-irst, Trento, Italy; (3)Jozef Stefan Institute, Ljubljana, Slovenia; (4)KINR, Kiev, Ukraine; (5)INFN Bari, Italy; (6)Bari, Firenze, Padova, Perugia, Pisa, Trento.
Speaker:
Vladimir Khomenkov(INFN)
more information
transparencies
8
Discussion: Pad Detector Characterization40-S2-A01
40-S2-A01
CERN
Discussion on Pad Detector Characterization with special focus on epitaxial silicon. CZ/MCZ will be discussed at the end of the DE session.
Speaker:
Gregor Kramberger and Eckhart Fretwurst
9
Lunch Break40-S2-A01
40-S2-A01
CERN
Defect Engineering (DE)40-S2-A01
40-S2-A01
CERN
10
The issue of the doping disuniformity in p-type MCz Si detectors40-S2-A01
40-S2-A01
CERN
M. Bruzzi for INFN Bari-Pisa-Firenze, SCIPP-UCSC, IRST-Trento
Results on Technotest sub-project: long term annealing of CZ Si detectors irradiated by 24 GeV/c protons40-S2-A01
40-S2-A01
CERN
E. Verbitskaya et al.
Ioffe Physico-Technical Institute RAS
Speaker:
Elena Verbitskaya(Ioffe Physico-Technical Institute RAS)
more information
transparencies
12
An annealing study on 23 GeV proton irradiated n-type MCz pad detectors40-S2-A01
40-S2-A01
CERN
Michael Moll (1), Alison G.Bates (2) and Jens Schmaler (3)
(1) CERN, Switzerland (2)University of Glasgow (3)TU Munich, Germany
Speaker:
Michael Moll(CERN)
more information
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13
Initial data on the DRIVE approach: results and analysis40-S2-A01
40-S2-A01
CERN
Zheng Li, E. Verbitskaya, V. Eremin, A. Ivanov, J. Härkönen, E.Tuovinen, P. Luukka
Brookhaven National Laboratory Upton, NY, USA Ioffe Physico-Technical Institute of Russian Academy of Sciences St. Petersburg, Russia Helsinki Institute of Physics, CERN/PH, 1211 Geneva, Switzerland
Speaker:
Zheng Li(Brookhaven)
more information
transparencies
14
Discussion: Defect Engineering40-S2-A01
40-S2-A01
CERN
Speaker:
Eckhart Fretwurst and Gregor Kramberger
15
Coffee Break40-S2-A01
40-S2-A01
CERN
New Structures (NS)40-S2-A01
40-S2-A01
CERN
16
Radiation tolerance of GOSSIP40-S2-A01
40-S2-A01
CERN
A.Aarts(4), J. van der Borst(2), P. Chefdeville(3), H. v.d. Graaf(1), Y. Giometaris(3), F. Hartjes(1), R. der Kinderen(2), A. Noordermeer(2), C. Salm(4), J. Schmitz(4), J. Timmermans(1) and J. Visschers(1)
NIKHEF[1], PANalytical Almelo[2], SACLAY[3] and Univ. of Twente[4]
Speaker:
Fred Hartjes(NIKHEF)
more information
transparencies
17
First electrical characterization of 3D detectors with electrodes of the same doping type40-S2-A01
40-S2-A01
CERN
Claudio Piemonte (a), Maurizio Boscardin (a), Alberto Pozza (a), Sabina Ronchin (a), Nicola Zorzi (a), Gian-Franco Dalla Betta (b), Luciano Bosisio (c)
(a) ITC-irst (b) University of Trento (c) University of Trieste
Speaker:
Claudio Piemonte(ITC-irst)
transparencies
18
Discussion on New Structures40-S2-A01
40-S2-A01
CERN
Speaker:
Richard Bates
RD50 Collaboration Board Meeting40-S2-A01
40-S2-A01
CERN
Will be distributed via vrvs: Mountain Virtual Room that belongs to Earth/Universe 17:00-20:30; Password required
19
Motivations for the MPI Semiconductor Lab to join RD5040-S2-A01
Defect and Material Characterization (DMC)AB Auditorium Meyrin
AB Auditorium Meyrin
CERN
20
Lifetime in highly irradiated Si (preliminary)AB Auditorium Meyrin
AB Auditorium Meyrin
CERN
J.Vaitkus, E.Gaubas, K.Jarasiunas, A.Kadys, E.Fretwurst(a)
Institute of Materials Science and Applied Research, Vilnius University, Vilnius, Lithuania; (a)Institute for Experimental Physics, University of Hamburg, Germany
Speaker:
Juozas Vaitkus(Vilnius)
more information
transparencies
21
Damage in silicon from very high energy protonsAB Auditorium Meyrin
AB Auditorium Meyrin
CERN
Gordon Davies, Shusaku Hayama
Kings College London
Speaker:
Gordon Davies(Kings College London)
more information
transparencies
22
Localized energy levels generated in Magnetic Czochralski silicon by proton irradiation and their influence on the sign of space charge densityAB Auditorium Meyrin
AB Auditorium Meyrin
CERN
D. Menichelli (a,b), M. Scaringella (a,b), M. Bruzzi (a,b), A. Macchiolo (b), C. Piemonte (c), N. Zorzi (c), A. Candelori (d), V. Eremin (e), E. Verbitskaya (e), I. Ilyashenko (e), I. Pintilie (f)
a) Department of Energetics, Florence; b) INFN, Florence division; c) ITC IRST, Trento; d) INFN, Padova division; e) Ioffe Phys. Tech. Inst., St. Petersbug; f) National Inst. Material Physics, Bhucarest .
Speaker:
David Menichelli(INFN & University of Florence)
more information
transparencies
23
Defect profiles of epitaxial silicon detectors of different thickness irradiated with 23 GeV protonsAB Auditorium Meyrin
AB Auditorium Meyrin
CERN
Frank Hönniger, Eckhart Fretwurst, Gunnar Lindström
Institute for Experimental Physics of the University of Hamburg
Speaker:
Frank Hoenniger(University of Hamburg)
more information
transparencies
24
Coffee BreakAB Auditorium Meyrin
AB Auditorium Meyrin
CERN
25
Discussion: Defect and Material CharacterizationAB Auditorium Meyrin
AB Auditorium Meyrin
CERN
Speaker:
Mara Bruzzi / Michael Moll
Full Detector Systems (FDS)AB Auditorium Meyrin
AB Auditorium Meyrin
CERN
26
Thermal issues for running Silicon detectors at the SLHC.AB Auditorium Meyrin
AB Auditorium Meyrin
CERN
P.P. Allport, G. Casse, J. Vossebeld
University of Liverpool
Speaker:
Joost Vossebeld(University of Liverpool)
more information
transparencies
27
Numerical simulations of heavily irradiated p-type and n-type silicon detectorsAB Auditorium Meyrin
AB Auditorium Meyrin
CERN
M. Petasecca(1,3,*), F. Moscatelli(1,2,3), D.Passeri(1,3), G.U. Pignatel(1,3)
(1) DIEI-University of Perugia, via Duranti, 93-06131 Perugia, Italy (2) IMM-CNR sez. di Bologna, via Gobetti 101-04129,Italy (3) INFN sez. Perugia, via Pascoli, 10-06125 Perugia, Italy
Speaker:
Marco Petasecca(University of Perugia)
more information
transparencies
28
Lunch BreakAB Auditorium Meyrin
AB Auditorium Meyrin
CERN
29
Study of radiation damage induced by 24 GeV/c and 26 MeV protons on heavily irradiated Magnetic Czochralski and Float Zone silicon detectorsAB Auditorium Meyrin
AB Auditorium Meyrin
CERN
Norman Manna SMART COLLABORATION
INFN BARI PISA FIRENZE
Speaker:
Norman Manna(INFN BARI)
more information
transparencies
30
Progress on p-type isolation technologyAB Auditorium Meyrin
AB Auditorium Meyrin
CERN
M. Lozano, F. Campabadal, C. Fleta, G. Pellegrini, J. M. Rafí, M. Ullán
IMB-CNM (CSIC) Barcelona, Spain
Defects and deep centres in the irradiated GaN and the results of last tests40-S2-A01
40-S2-A01
CERN
J.Vaitkus, E.Gaubas, V.Kazukauskas, V.Kalendra, J.Storasta, A.Mekys (a), A.Blue, J.Grant (b)
(a)Institute of Materials Science and Applied Research, Vilnius University, Vilnius, Lithuania; (b) Dept. Physics and Astronomy, Glasgow University, Glasgow, Scotland, UK
Speaker:
Juozas Vaitkus(Vilnius)
more information
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43
Characterisation of defect centres in epitaxial GaN40-S2-A01
40-S2-A01
CERN
M. Kozubal (a), P. Kaminski (a), R. Kozlowski (a), M. Miczuga (b)and M. Pawlowski (a,b)
(a) Institute of Electronic Materials Technology, Warsaw (b) Military University of Technology, Warsaw
Speaker:
Michal Kozubal(Institute)
more information
transparencies
44
Radiation Hardness of Minimum Ionizing Particle Detectors Based on SiC p+n Junctions40-S2-A01
40-S2-A01
CERN
F. Moscatelli, A. Scorzoni,, A. Poggi, M. Bruzzi, S. Sciortino, S. Lagomarsino, G. Wagner and R. Nipoti
DIEI and INFN of Perugia, Italy CNR-IMM of Bologna Italy Dipartimento di Energetica and INFN of Florence, Italy Institut für Kristallzüchtung, Berlin, Germany
Speaker:
Francesco Moscatelli(DIEI and INFN of Perugia, CNR-IMM of BO Italy)
more information
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45
Report on SiC project on RD50 common structures40-S2-A01
40-S2-A01
CERN
M. Bruzzi, S. Miglio, C. Tosi, C. Manfredotti, A. LoGiudice, E. Vittone, C. Lanzieri, M. Kelley, Ian W. Henderson, H.F.W. Sadrozinski, G. Wagner
INFN Firenze, University of Torino, SCIPP-UCSC, IKZ-Berlin
Speaker:
Mara Bruzzi(INFN)
more information
transparencies
46
Discussion on New Materials40-S2-A01
40-S2-A01
CERN
Speaker:
Elena Verbitskaya
47
End of Workshop40-S2-A01
40-S2-A01
CERN
Speaker:
Mara and Michael
RD50 Discussion Session - Milestones for 200640-S2-A01